NTE NTE235 Datasheet

NTE235 Silicon NPN Transistor Final RF Power Output
Description:
The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings:
Collector–Emitter Voltage (R Collector–Base Voltage, V Emitter–Base Voltage, V Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
= 150Ω), V
BE
CBO
Continuous 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +50°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V Collector–Emitter Breakdown Voltage V Emitter–Base Breakdown Voltage V Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage V Current Gain–Bandwidth Product f Output Capacitance C Power Output P Collector Efficiency η
(TC =+25°C unless otherwise specified)
J
stg
(BR)CBOIC (BR)CERIC (BR)EBOIE
CER
CBO EBO
FE CE(sat)IC BE(sat)IC
T ob
VCB = 40V, IE = 0 10 µA VEB = 4V, IC = 0 10 µA VCE = 5V, IC = 500mA 25 200
VCE = 10V, IC = 100mA 100 150 MHz VCB = 10V, f = 1MHz 45 60 pF VCC = 12V, Pin = 0.2W,
O
f = 27MHz
75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100µA, IB = 0 80 V = 1mA, RBE = 150 75 V = 100µA, IC = 0 5 V
= 1A, IB = 100mA 0.15 0.6 V = 1A, IB = 100mA 0.9 1.2 V
4.0 W 60 %
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54)
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter Collector/Tab
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