NTE235
Silicon NPN Transistor
Final RF Power Output
Description:
The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output
amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings:
Collector–Emitter Voltage (R
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
= 150Ω), V
BE
CBO
Continuous 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +50°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Current Gain–Bandwidth Product f
Output Capacitance C
Power Output P
Collector Efficiency η
(TC =+25°C unless otherwise specified)
J
stg
(BR)CBOIC
(BR)CERIC
(BR)EBOIE
CER
CBO
EBO
FE
CE(sat)IC
BE(sat)IC
T
ob
VCB = 40V, IE = 0 – – 10 µA
VEB = 4V, IC = 0 – – 10 µA
VCE = 5V, IC = 500mA 25 – 200
VCE = 10V, IC = 100mA 100 150 – MHz
VCB = 10V, f = 1MHz – 45 60 pF
VCC = 12V, Pin = 0.2W,
O
f = 27MHz
75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100µA, IB = 0 80 – – V
= 1mA, RBE = 150Ω 75 – – V
= 100µA, IC = 0 5 – – V
= 1A, IB = 100mA – 0.15 0.6 V
= 1A, IB = 100mA – 0.9 1.2 V
4.0 – – W
60 – – %