NTE NTE2350, NTE2349 Datasheet
NTE2349 (NPN) & NTE2350 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A
hFE = 400 (Min) @ IC = 50A
D Diode Protection to Rated I
D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor
D Junction Temperature to +200°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EB
C
Continuous 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 100A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Power Dissipation (TC = +25°C), P
Derate Above 25°C @ TC = +100°C 1.71W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering, 10sec Max), T
CB
CEO
B
C
stg
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
L
0.584°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+275°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Emitter Leakage Current I
Emitter Cutoff Current I
(BR)CEOIC
CER
I
CEO
EBO
= 100mA, IB = 0 120 – – V
VCE = 120V, RBE = 1kΩ – – 2 mA
VCE = 120V, RBE = 1kΩ, T
VCE = 50V, IB = 0 – – 2 mA
VBE = 5V, IC = 0 – – 2 mA
= +150°C – – 10 mA
C
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
IC = 25A, VCE = 5V 1000 – 18000
IC = 50A, VCE = 5V 400 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 25A, IB = 250mA – – 2.5 V
IC = 50A, IB = 500mA – – 3.5 V
Base–Emitter Saturation Voltage V
BE(sat)IC
= 25A, IB = 200mA – – 3.0 V
IC = 50A, IB = 300mA – – 4.5 V
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Schematic Diagram
C
B
E
NPN PNP
C
B
E
.350 (8.89)
.215 (5.45)
Emitter
.430
(10.92)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.061 (1.55) Max.312 (7.93) Min
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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