NTE NTE2348 Datasheet

NTE2348

Silicon NPN Transistor

High Voltage, High Speed Switch

Features:

D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area

Absolute Maximum ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

(TA = +25°C unless otherwise specified)

CBO

CEO

EBO

Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

B

= +25°C), P

C

stg

C

J

Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

(TA = +25°C unless otherwise specified)

CBO
EBO

FE (1)

h

FE (2)

T

ob
CE(sat)IC
BE(sat)IC

VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 800mA 10 – –
VCE = 5V, IC = 4A 8 – –
VCE = 10V, IC 800mA – 15 – MHz
VCB = 10V, f = 1MHz – 215 – pF

= 6A, IB = 1.2mA – – 2.0 V
= 6A, IB = 1.2mA – – 1.5 V

1100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC

Turn–On Time t
Storage Time t
Fall Time t

on

stg

= 1mA, IE = 0 1100 – – V
= 5mA, RBE = ∞ 800 – – V
= 1mA, IC = 0 7 – – V
= 6A, IB1 = IB2 = 1.2mA,

L = 2mH, Clamped
VCC = 400V, IB1 = –2.5A,

IB2 =IC = 8A, RL = 50Ω

f

800 – – V

– – 0.5 µs
– – 3.0 µs
– – 0.3 µs

.615 (15.62).190 (4.82)

C

.787

(20.0)

.591

(15.02)

.787

(20.0)

.126

(3.22)

Dia

BCE

.215 (5.47)