NTE NTE2348 Datasheet
NTE2348
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area
Absolute Maximum ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
(TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
B
= +25°C), P
C
stg
C
J
Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
(TA = +25°C unless otherwise specified)
CBO
EBO
FE (1)
h
FE (2)
T
ob
CE(sat)IC
BE(sat)IC
VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 800mA 10 – –
VCE = 5V, IC = 4A 8 – –
VCE = 10V, IC 800mA – 15 – MHz
VCB = 10V, f = 1MHz – 215 – pF
= 6A, IB = 1.2mA – – 2.0 V
= 6A, IB = 1.2mA – – 1.5 V
1100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC
Turn–On Time t
Storage Time t
Fall Time t
on
stg
= 1mA, IE = 0 1100 – – V
= 5mA, RBE = ∞ 800 – – V
= 1mA, IC = 0 7 – – V
= 6A, IB1 = IB2 = 1.2mA,
L = 2mH, Clamped
VCC = 400V, IB1 = –2.5A,
IB2 =IC = 8A, RL = 50Ω
f
800 – – V
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.615 (15.62).190 (4.82)
C
.787
(20.0)
.591
(15.02)
.787
(20.0)
.126
(3.22)
Dia
BCE
.215 (5.47)
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