NTE NTE2347 Datasheet

NTE2347

Silicon NPN Transistor

General Purpose, Medium Power

Description:

The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.

Absolute Maximum Ratings:

Collector–Base Voltage (IE = 0), V
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Collector Current, I

C

Total Power Dissipation, P

B

= 0), V

C

tot

CBO

= 0), V

EBO

CEO

TA ≤ +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

≤ +25°C 7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

T

≤ +100°C 4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

J

stg

thJC

Thermal Resistance, Junction–to–Ambient, R

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

175°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h

Transition Frequency f
Collector–Base Capacitance C
Turn–On Time t
Storage Time t
Fall Time t

(TC = +25°C unless otherwise specified)

CES

EBO

CEO(sus)IC

CE(sat)IC

BE(sat)IC

FE

CBO

on

VCE = 150V, VBE = 0 – – 1 mA
VCE = 100V, VBE = 0 – – 1 µA
VCE = 100V, VBE = 0, TC = +150°C – – 100 µA
VEB = 6V, IC = 0 – – 1 mA

= 50mA, IB = 0, Note 1 80 – – V
= 5A, IB = 500mA, Note 1 – – 1 V

= 5A, IB = 500mA, Note 1 – – 1.6 V
IC = 2A, VCE = 2V, Note 1 40 – 120
IC = 2A, VCE = 2V, TC = –55°C, Note 1 15 – –
IC = 500mA, VCE = 5V 50 – – MHz

T

VCB = 10V, IE = 0, f = 1MHz – – 80 pF
VCC = 20V, IC = 500mA, IB1 = 500mA – – 0.35 µs
VCC = 20V, IC = 5A, IB1 = –IB2 = 500mA

s

f

Note 1. Pulse Test: Pulse Duration = 300µs, Duty Cycle = 1.5%.

– – 0.35 µs
– – 0.3 µs

.260

(6.6)

Max

.500

(12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

Emitter

.018 (0.45)

Base

Collector/Case

45°

.031 (.793)