NTE NTE2346, NTE2345 Datasheet
NTE2345 (NPN) & NTE2346 (PNP)
Silicon Complementary Transistors
General Purpose Darlington, Power Amplifier
Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an
SOT–82 type package designed for use in audio output stages and general amplifier and switching
applications..
Features:
D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V
D Junction Temperature to +150°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CBO
EBO
Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
Base Current, I
Total Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
≤ 10ms, δ ≤ 0.1) 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
B
= +25°C), P
C
J
stg
D
thJC
Thermal Resistance, Junction–to–Ambient, R
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.08K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TJ = +25°C unless otherwise specified)
CBO
I
CEO
EBO
FE
IE = 0, V
IE = 0, V
IB = 0, V
IC = 0, V
IC = 500mA, V
IC = 3A, V
IC = 6A, V
= 120V – – 0.2 mA
CBO
= 120V, TJ = +150°C – – 2mA mA
CBO
= 60V – – 0.5 mA
CEO
= 5V – – 5 mA
EBO
= 3V, Note 1 – 2700 –
CEO
= 3V, Note 1 750 – –
CEO
= 3V, Note 1 – 400 –
CEO
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter Voltage V
Collector–Emitter Saturation Voltage V
CE(sat)IC
Small–Signal Current Gain h
Cut–Off Frequency f
Diode, Forward Voltage V
Second Breakdown Collector Current
I
BE
hfe
(SB)
IC = 3A, V
= 3V, Note 2 2.5 – – V
CEO
= 3A, IB = 12mA 2.0 – – V
IC = 3A, V
fe
IC = 3A, V
IF = 3A – 1.8 – V
F
V
= 60V, tp = 25ms 1 – – A
CEO
= 3V, f = 1MHz 10 – –
CEO
= 3V – 100 – kHz
CEO
Non–Repetitive, without Heatsink
Turn–On Time t
Turn–Off Time t
on
off
I
C(on)
I
C(on)
= 3A, I
= 3A, I
B(on)
B(on)
= I
= I
= 12mA – 1 2 µs
B(off)
= 12mA – 5 10 µs
B(off)
Note 2. VBE decreases by about 3.8mV/K with increasing temperature.
Schematic Diagram
C
B
E
NPN PNP
B
C
E
.118 (3.0)
Min
.307 (7.8)
Max
BCE
.100 (2.54)
See Note
.147
(3.75)
.437
(11.1)
Max
.100 (2.54)
.602
(15.3)
Min
.090 (2.29) .047 (1.2)
Note: Collector connected to metal part of mounting surface.
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