NTE NTE2342, NTE2341 Datasheet
NTE2341(NPN) & NTE2342 (PNP)
Silicon Complementary Transistors
Darlington Driver
Description:
The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a
TO92 type package designed for general purpose, low frequency applications and as relay drivers.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Total Power Dissipation, P
CBO
CEO
EBO
C
tot
TA = +25°C 800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C, Note 1 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
Junction Temperature, T
Storage Temperature Range, T
J
stg
Maximum Thermal Resistance, Junction–to–Ambient, R
Note 1 125K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
156K/W. . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm
x 10mm.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–EmitterBreakdown Voltage V
Collector–BaseBreakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TJ = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CEO
I
CBO
EBO
FE
= 50mA, IB = 0 80 – – V
= 100µA, IB = 0 100 – – V
= 100µA, IC = 0 5 – – V
VCE = 40V, IB = 0 – – 500 nA
VCB = 100V, IE = 0 – – 100 nA
VCE = 4V, IC = 0 – – 100 nA
IC = 150mA, VCE = 10V 1000 – –
IC = 500mA, VCE = 10V 2000 – –
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
NTE2341
(NPN)
C
B
E
CE(sat)IC
BE(sat)IC
T
= 500mA, IB = 0.5mA – – 1.3 V
IC = 1A, IB = 1mA – – 1.8 V
= 1A, IB = 1mA, Note 3 – – 2.2 V
IC = 500mA, VCE = 5V,
f = 100MHz
– 200 – MHz
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
NTE2342
(PNP)
C
B
(12.7)
Min
.021 (.445) Dia Max
E C B
E
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
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