NTE NTE2340 Datasheet
NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Very Small Fluctuation in Breakdown Voltages
D Large Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TC = +25°C unless otherwise specified)
CBO
CEO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut–Off Current I
Emitter Cut–Off Current I
Collector–Emitter Breakdown Voltage V
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
Turn–On Time t
Storage Time t
Fall Time t
Energy Handling Capability E
(TC = +25°C unless otherwise specified)
J
stg
CBO
EBO
(BR)CEOIC
FE (1)
h
FE (2)
CE(sat)IC
BE(sat)IC
T
on
stg
f
s/b
60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 50V, IE = 0 – – 100 µA
VEB = 7V, IC = 0 – – 2 mA
= 5mA, IB = 0 50 – 70 V
VCE = 3V, IC = 4A 2000 – 5000
VCE = 3V, IC = 8A 500 – –
= 4A, IB = 8mA – – 1.5 V
= 4A, IB = 8mA – – 2.0 V
VCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz
VCC = 50V, IB1 = –IB2 = 8mA,
IC = 4A
IC = 1A, L = 100mH,
RBE = 100Ω
– 0.5 – µs
– 4.0 – µs
– 1.0 – µs
50 – – mJ
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
.343 (8.72) .148 (3.72)
C
E
.059 (1.5)
.406
(10.3)
.413
(10.5)
.256 (6.5)
.043 (1.1)
.032 (0.82)
.100 (2.54) .020 (.508)
.043 (1.1)
BCE
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