NTE NTE2340 Datasheet

NTE2340

Silicon NPN Transistor

Darlington Power Amp, Switch

Features:

D 60V Zener Diode Built–In Between Collector and Base
D Very Small Fluctuation in Breakdown Voltages
D Large Energy Handling Capability
D High Speed Switching

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TC = +25°C unless otherwise specified)

CBO

CEO

Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, P

C

TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cut–Off Current I
Emitter Cut–Off Current I
Collector–Emitter Breakdown Voltage V
DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
Turn–On Time t
Storage Time t
Fall Time t
Energy Handling Capability E

(TC = +25°C unless otherwise specified)

J

stg

CBO
EBO

(BR)CEOIC

FE (1)

h

FE (2)
CE(sat)IC
BE(sat)IC

T

on

stg

f

s/b

60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCB = 50V, IE = 0 – – 100 µA
VEB = 7V, IC = 0 – – 2 mA

= 5mA, IB = 0 50 – 70 V
VCE = 3V, IC = 4A 2000 – 5000
VCE = 3V, IC = 8A 500 – –

= 4A, IB = 8mA – – 1.5 V

= 4A, IB = 8mA – – 2.0 V
VCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz
VCC = 50V, IB1 = –IB2 = 8mA,

IC = 4A

IC = 1A, L = 100mH,
RBE = 100Ω

– 0.5 – µs
– 4.0 – µs
– 1.0 – µs

50 – – mJ

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

B

.343 (8.72) .148 (3.72)

C

E

.059 (1.5)

.406

(10.3)

.413

(10.5)

.256 (6.5)

.043 (1.1)

.032 (0.82)

.100 (2.54) .020 (.508)

.043 (1.1)

BCE