NTE NTE2339 Datasheet
NTE2339
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
= +25°C), P
C
stg
C
J
Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
(TA = +25°C unless otherwise specified)
CBO
EBO
FE (1)
h
FE (2)
T
ob
CE(sat)IC
BE(sat)IC
VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 200mA 20 – 40
VCE = 5V, IC = 1A 8 – –
VCE = 10V, IC 200mA – 15 – MHz
VCB = 10V, f = 1MHz – 60 – pF
= 1.5A, IB = 300mA – – 2.0 V
= 1.5A, IB = 300mA – – 1.5 V
1100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Ω
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC
Turn–On Time t
Storage Time t
Fall Time t
.402 (10.2) Max
.224 (5.7) Max
on
stg
= 1mA, IE = 0 1100 – – V
= 5mA, RBE = ∞ 800 – – V
= 1mA, IC = 0 7 – – V
= 1.5A, IB1 = IB2 = 300mA,
L = 2mH, Clamped
VCC = 400V, IB1 = –2.5A,
IB2 =IC = 2A, RL = 200
f
.122 (3.1)
Dia
800 – – V
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.173 (4.4) Max
.114 (2.9) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.531
(13.5)
Min
.100 (2.54) .059 (1.5) Max
.165
(4.2)
NOTE: Tab is isolated
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