NTE NTE2338 Datasheet
NTE2338
Silicon NPN Transistor
w/
Darlington Power Amp
Internal
Damper & Zener Diode
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 3.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
CEO
EBO
= +25°C), P
C
stg
C
J
60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Turn–On Time t
Turn–Off Time t
(TA = +25°C unless otherwise specified)
(BR)CBOIC
(BR)EBOIE
CEO
FE
CE(sat)IC
BE(sat)IC
on
off
VCE = 50V, RBE = ∞ – – 10 µA
VCE = 3V, IC = 1A 2000 – 30000
IC = 1.5A, IB = 1.5mA – – 2.0 V
IC = 1.5A, IB = 1.5mA – – 2.5 V
IC = 1A, IB1 = –IB2 = 1mA – 0.5 – µs
= 0.1mA, IE = 0 50 60 70 V
= 50mA, IC = 0 7 – – V
= 1A, IB = 1mA – – 1.5 V
= 1A, IB = 1mA – – 2.0 V
– 2.0 – µs
.450
(11.4)
Max
Schematic Diagram
C
B
E
.330 (8.38) Max
.175
(4.45)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.118
(3.0)
Dia
.030 (.762) Dia
ECB
.090 (2.28)
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