NTE NTE2337 Datasheet
Silicon NPN Transistor
High Speed Switch
Features:
D High Collector–Base Voltage (V
D Wide Area of Safety Operation (ASO)
D Good Linearity of DC Current Gain (h
CBO
)
NTE2337
)
FE
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter Base Voltage, V
EBO
Peak Collector Current, I
Collector Current, I
Base Current, I
7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
Collector Power Dissipation, P
: (TC = +25°C unless otherwise specified)
900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CP
C
TC = +25°C 45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector Emitter Voltage V
DC Current Gain
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
Turn–On Time t
Storage Time t
Collector Current Fall Time t
: (TC = +25°C unless otherwise specified)
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
CBO
EBO
CEO
h
FE1
h
FE2
CE(sat)IC
BE(sat)IC
T
on
stg
f
VCB = 900V, IE = 0 – – 100 µA
VEB = 5V, IC = 0 – 100 µA
IC = 10mA, IB = 0 500 – – V
VCE = 5V, IC = 0.1A 15 – –
VCE = 5V, IC = 4A 8 – –
= 4A, IB = 0.8A – – 1.0 V
= 4A, IB = 0.8A – – 1.5 V
VCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz
IC = 4A,
IB1 = 0.8A, IB2 = –1.6A,
VCC = 200V
V = 200V
– – 1.0 µs
– – 3.0 µs
– – 0.3 µs
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.669
(17.0)
Max
.531
(13.5)
Min
.295
(7.5)
BCE
.122 (3.1)
Dia
.165
(4.2)
.114 (2.9) Max
.100 (2.54) .059 (1.5) Max
NOTE: Tab is isolated
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