NTE NTE2336 Datasheet
NTE2336
Silicon NPN Transistor
w
Darlington Switch
/Internal Damper
& Zener Diode
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Low Fluctuation in Breakdown Voltages
D High Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TC = +25°C unless otherwise specified)
CBO
CEO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
= +25°C), P
C
= +25°C), P
A
J
stg
C
C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Voltage V
DC Current Gain h
CBO
EBO
CEOIC
VCB = 50V, IE = 0 – – 100 µA
VEB = 7V, IC = 0 – – 2 mA
= 5mA, IB = 0 50 – 70 V
VCE = 3V, IC = 4A 2000 – 5000
FE
VCE = 3V, IC = 8A 500 – –
60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
CE(sat)IC
BE(sat)IC
= 4A, IB = 8mA – – 1.5 V
= 4A, IB = 8mA – – 2.0 V
VCE = 10V, IC = 500mA, f = 1MHz – 20 – MHz
T
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Turn–On Time t
Storage Time t
Fall Time t
Energy Handling Capacity E
B
.402 (10.2) Max
on
stg
s/b
VCC = 50V, IC = 4A,
IB1 = 8mA, IB2 = –8mA
f
– 0.5 – µs
– 4 – µs
– 1 – µs
IC = 1A, L = 100mH, RBE = 100Ω 50 – – mJ
C
E
.173 (4.4) Max
.224 (5.7) Max
.669
(17.0)
Max
.531
(13.5)
Min
.295
(7.5)
BCE
.122 (3.1)
Dia
.165
(4.2)
.114 (2.9) Max
.100 (2.54) .059 (1.5) Max
NOTE: Tab is isolated
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