NTE NTE2334 Datasheet

NTE2334

Silicon NPN Transistor

w

Darlington Driver

/Internal Damper

and Zener Diode

Description:

The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220
type package designed for use in applications such as the switching of the L load of a motor driver,
hammer driver, relay driver, etc.

Features:

D High DC Current Gain
D Large Current Capacity and Wide ASO
D Contains 60 ±10V Avalanche Diode between Collector and Base
D High 50mJ Reverse Energy Rating

Absolute Maximum Ratings:

Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I

C

(TA = +25°C unless otherwise specified)

CBO

CEO

EBO

Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f

B

= +25°C), P

C

J

stg

(TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

CBO
EBO

FE

T

60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VBE = 40V, IE = 0 – – 100 µA
VEB = 5V, IC = 0 – – 3 mA
VCE = 3V, IC = 2.5A 1000 4000 –
VCE = 5V, IC = 2.5A – 20 – MHz

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC

Unclamped Inductive Load Energy E
Turn–On Time t
Storage Time t
Fall Time t

s/b

on

stg

= 2.5A, IB = 5mA – 0.9 1.5 V
= 2.5A, IB = 5mA – – 2.0 V
= 5mA, IE = 0 50 60 70 V

= 50mA, RBE = ∞ 50 60 70 V
L = 100mH, RBE = 100Ω 50 – – mJ
VCC = 20V, IC = 3A,

IB1 = –IB2 = 6mA

f

.420 (10.67)

Max

– 0.6 – µs
– 4.0 – µs
– 1.5 – µs

.110 (2.79)

.147 (3.75)

C

B

E

Dia Max

.250 (6.35)

Max

.070 (1.78) Max

Base

.100 (2.54) Collector/Tab

.500

(12.7)

Max

.500

(12.7)

Min

Emitter