NTE NTE2333 Datasheet
NTE2333
Silicon NPN Power Transistor
for Switching Power Applications
Description:
The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–
operated Switchmode Power supplies and electronic light ballasts.
Features:
D Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain h
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Absolute Maximum Ratings:
Collector–Emitter Sustaining Voltage, V
Collector–Emitter Breakdown Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
= +25°C), P
C
Derate above 25°C 0.8W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
Storage Temperature Range, T
J
stg
Maximum Thermal Resistance, Junction–to–Case, R
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), T
FE
CEO
CES
D
thJC
thJA
450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . .
L
+260°C. . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Note 2. Proper strike and creepage distance must be provided.
Electrical Characteristics: (TC = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus
CEO
I
CES
EBO
ON Characteristics
Base–Emitter Saturation Voltage V
Collector–Emitter Saturation Voltage V
DC Current Gain h
BE(sat)IC
CE(sat)IC
FE
Dynamic Characteristics
Current Gain Bandwidth Product f
Output Capacitance C
Input Capacitance C
Dynamic Saturation Voltage:
V
CE(dsat)
Determined 1µs and 3µs respectively
after rising IB1 reaches 90% of final
after rising I reaches 90% of final
I
B1
B1
Switching Characteristics: Resistive Load (DC ≤ 10%, Pulse Width = 20µs)
Turn–On Time t
Turn–Off Time t
Turn–On Time t
Turn–Off Time t
on
off
on
off
IC = 100mA, L = 25mH 450 – – V
)
VCE = 450V, IB = 0 – – 100 µA
VCE = 1000V, VEB = 0 – – 100 µA
VCE = 1000V, VEB = 0, TC = +125°C – – 500 µA
VCE = 800V, VEB = 0, TC = +125°C – – 100 µA
VEB = 9V, IC = 0 – – 100 µA
= 1.3A, IB = 0.13A – 0.83 1.2 V
IC = 3A, IB = 0.6A – 0.94 1.3 V
= 1.3A, IB = 0.13A – 0.25 0.6 V
TC = +125°C – 0.27 0.65 V
IC = 3A, IB = 0.6A – 0.35 0.7 V
TC = +125°C – 0.4 0.8 V
IC = 0.5A, VCE = 5V 14 – 34
TC = +125°C – 32 –
IC = 3A, VCE = 1V 6 10 – V
TC = +125°C 5 8 –
IC = 1.3A, VCE = 1V
IC = 10mA, VCE = 5V
IC = 0.5A, VCE = 10V, f = 1MHz – 14 – MHz
T
VCB = 10V, IB = 0, f = 1MHz – 75 120 pF
ob
VEB = 8V – 1000 1500 pF
ib
IC = 1.3A,
1µs – 5.5 – V
IB1 = 130mA,
VCC = 300V
V = 300V
TC = +25°C
to +125°C
TC = +125°C – 12.0 – V
3µs – 3.0 – V
TC = +125°C – 7.0 – V
IC = 3.0A,
IB1 = 600mA,
VCC = 300V
V = 300V
1µs – 9.5 – V
TC = +125°C – 14.5 – V
3µs – 2.0 – V
TC = +125°C – 7.5 – V
IC = 3A, IB1 = 600mA,
IB2 = 1.5A, VCC = 300V
TC = +125°C – 100 – ns
TC = +125°C – 2.1 – µs
IC = 1.3A, IB1 = 130mA,
IB2 = 650mA,
VCC = 300V
V = 300V
TC = +125°C – 130 – ns
TC = +125°C – 1.5 – µs
11 17 –
10 22 –
– 90 180 ns
– 1.7 2.5 µs
– 200 300 ns
– 1.2 2.5 µs
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