NTE NTE2333 Datasheet

NTE2333

Silicon NPN Power Transistor

for Switching Power Applications

Description:

The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–
operated Switchmode Power supplies and electronic light ballasts.

Features:

D Improved Efficiency Due to Low Base Drive Requirements:

High and Flat DC Current Gain h
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Absolute Maximum Ratings:

Collector–Emitter Sustaining Voltage, V
Collector–Emitter Breakdown Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

Derate above 25°C 0.8W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Junction Temperature, T
Storage Temperature Range, T

J

stg

Maximum Thermal Resistance, Junction–to–Case, R
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), T

FE

CEO

CES

D

thJC

thJA

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . .

L

+260°C. . . . . . . . . . .

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Note 2. Proper strike and creepage distance must be provided.

Electrical Characteristics: (TC = +25°C, unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V

Collector Cutoff Current I

Emitter Cutoff Current I

CEO(sus

CEO

I

CES

EBO

ON Characteristics

Base–Emitter Saturation Voltage V

Collector–Emitter Saturation Voltage V

DC Current Gain h

BE(sat)IC

CE(sat)IC

FE

Dynamic Characteristics

Current Gain Bandwidth Product f
Output Capacitance C
Input Capacitance C
Dynamic Saturation Voltage:

V

CE(dsat)

Determined 1µs and 3µs respectively
after rising IB1 reaches 90% of final

after rising I reaches 90% of final
I

B1

B1

Switching Characteristics: Resistive Load (DC ≤ 10%, Pulse Width = 20µs)
Turn–On Time t

Turn–Off Time t

Turn–On Time t

Turn–Off Time t

on

off

on

off

IC = 100mA, L = 25mH 450 – – V

)

VCE = 450V, IB = 0 – – 100 µA
VCE = 1000V, VEB = 0 – – 100 µA
VCE = 1000V, VEB = 0, TC = +125°C – – 500 µA
VCE = 800V, VEB = 0, TC = +125°C – – 100 µA
VEB = 9V, IC = 0 – – 100 µA

= 1.3A, IB = 0.13A – 0.83 1.2 V

IC = 3A, IB = 0.6A – 0.94 1.3 V

= 1.3A, IB = 0.13A – 0.25 0.6 V

TC = +125°C – 0.27 0.65 V

IC = 3A, IB = 0.6A – 0.35 0.7 V

TC = +125°C – 0.4 0.8 V

IC = 0.5A, VCE = 5V 14 – 34

TC = +125°C – 32 –

IC = 3A, VCE = 1V 6 10 – V

TC = +125°C 5 8 –
IC = 1.3A, VCE = 1V
IC = 10mA, VCE = 5V

IC = 0.5A, VCE = 10V, f = 1MHz – 14 – MHz

T

VCB = 10V, IB = 0, f = 1MHz – 75 120 pF

ob

VEB = 8V – 1000 1500 pF

ib

IC = 1.3A,

1µs – 5.5 – V

IB1 = 130mA,

VCC = 300V

V = 300V

TC = +25°C

to +125°C

TC = +125°C – 12.0 – V

3µs – 3.0 – V

TC = +125°C – 7.0 – V

IC = 3.0A,

IB1 = 600mA,

VCC = 300V

V = 300V

1µs – 9.5 – V

TC = +125°C – 14.5 – V

3µs – 2.0 – V

TC = +125°C – 7.5 – V

IC = 3A, IB1 = 600mA,
IB2 = 1.5A, VCC = 300V

TC = +125°C – 100 – ns

TC = +125°C – 2.1 – µs
IC = 1.3A, IB1 = 130mA,

IB2 = 650mA,
VCC = 300V

V = 300V

TC = +125°C – 130 – ns

TC = +125°C – 1.5 – µs

11 17 –
10 22 –

– 90 180 ns

– 1.7 2.5 µs

– 200 300 ns

– 1.2 2.5 µs