NTE NTE2332 Datasheet

NTE2332

Darlington Silicon NPN Transistor

w

/ Internal Damper & Zener Diode

Description:

The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor driv­ers, printer hammer drivers, relay drivers, etc.

Features:

D High DC Current Gain
D Large Current Capacity and Wide ASO
D Contains 60 ±10V Avalanche Diode Between Collector and Base
D Uniformity in Collector–to–Base Breakdown Voltage Due to Adoption of Accurate Impurity

Diffusion Process

D 25mJ Reverse Energy Rating

Absolute Maximum Ratings:

Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Peak Collector Current, i
Base Current, I
Collector Dissipation (T
Junction Temperature, T

C

cp

B

= +25°C), P

C

J

Storage Temperature Range, T

Electrical Characteristics:

(TA = +25°C, unless otherwise specified)

CBO

CEO

EBO

stg

(TA = +25°C, unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I

, 60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

, 60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CEO
EBO

VCB = 40V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 2 mA

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)

Parameter

Symbol Test Conditions Min Typ Max Unit

DC Current Gain h
Gain Bandwidth Product f
Collector–Emitter Saturation

V

CE(sat)IC

Voltage

Base–Emitter Saturation

V

BE(sat)IC

Voltage

Collector–Base Breakdown

V

(BR)CBOIC

Voltage

Collector–Emitter Breakdown

V

(BR)CEOIC

Voltage

Unclamped Inductive Load

E

Energy
Turn–On Time t
Storage Time t
Fall Time t

FE

T

s/b

on

stg

VCE = 5V, IC = 1A 1000 4000 –
VCE = 5V, IC = 1A – 180 – MH

Z

= 1A, IB = 4mA – 1.0 1.5 V

= 1A, IB = 4mA – – 2.0 V

= 0.1mA, IE = 0 50 60 70 V

= 1mA, RBE = ∞ 50 60 70 V

L = 100mH, RBE = 100Ω 25 – – mJ

VCC = 20V, IC = 1A – 0.2 – µs
IB1 = –IB2 = 4mA – 3.5 – µs

f

IB1 = –IB2 = 4mA – 0.5 – µs

.420 (10.67)

Max

.110 (2.79)

C

B

E

.147 (3.75)

Dia Max

(6.35)

.070 (1.78) Max

Base

.100 (2.54) Collector/Tab

.500

(12.7)

Max

.250
Max

.500

(12.7)

Min

Emitter