NTE NTE2332 Datasheet
NTE2332
Darlington Silicon NPN Transistor
w
/ Internal Damper & Zener Diode
Description:
The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor drivers, printer hammer drivers, relay drivers, etc.
Features:
D High DC Current Gain
D Large Current Capacity and Wide ASO
D Contains 60 ±10V Avalanche Diode Between Collector and Base
D Uniformity in Collector–to–Base Breakdown Voltage Due to Adoption of Accurate Impurity
Diffusion Process
D 25mJ Reverse Energy Rating
Absolute Maximum Ratings:
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Peak Collector Current, i
Base Current, I
Collector Dissipation (T
Junction Temperature, T
C
cp
B
= +25°C), P
C
J
Storage Temperature Range, T
Electrical Characteristics:
(TA = +25°C, unless otherwise specified)
CBO
CEO
EBO
stg
(TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
, 60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, 60 ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
EBO
VCB = 40V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 2 mA
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
Parameter
Symbol Test Conditions Min Typ Max Unit
DC Current Gain h
Gain Bandwidth Product f
Collector–Emitter Saturation
V
CE(sat)IC
Voltage
Base–Emitter Saturation
V
BE(sat)IC
Voltage
Collector–Base Breakdown
V
(BR)CBOIC
Voltage
Collector–Emitter Breakdown
V
(BR)CEOIC
Voltage
Unclamped Inductive Load
E
Energy
Turn–On Time t
Storage Time t
Fall Time t
FE
T
s/b
on
stg
VCE = 5V, IC = 1A 1000 4000 –
VCE = 5V, IC = 1A – 180 – MH
Z
= 1A, IB = 4mA – 1.0 1.5 V
= 1A, IB = 4mA – – 2.0 V
= 0.1mA, IE = 0 50 60 70 V
= 1mA, RBE = ∞ 50 60 70 V
L = 100mH, RBE = 100Ω 25 – – mJ
VCC = 20V, IC = 1A – 0.2 – µs
IB1 = –IB2 = 4mA – 3.5 – µs
f
IB1 = –IB2 = 4mA – 0.5 – µs
.420 (10.67)
Max
.110 (2.79)
C
B
E
.147 (3.75)
Dia Max
(6.35)
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
.500
(12.7)
Max
.250
Max
.500
(12.7)
Min
Emitter
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