NTE2330
Silicon NPN Transistor
High Gain Amp
Features:
D Excellent Wide Safe Operating Area
D Included Avalanche Diode
D High DC Current Gain
D High Collector Power Dissipation Capability
w
/Internal Zener Diode
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
: (TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
= +25°C), P
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
stg
(TA = +25°C unless otherwise specified)
C
J
(BR)CBOIC
(BR)CBOIC
EBO
FE
CE(sat)IC
55 (+15, –10) V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55 (+15, –10) V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10mA, IE = 0 45 55 70 V
= 100mA, IB = 0 45 55 70 V
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 500mA 500 1000 2500
= 500mA, IB = 2mA – – 2.0 V
IC = 1A, IB = 20mA – – 3.0 V
Base–Emitter Voltage V
Allowable Energy E
BE
VCE = 5V, IC = 500mA 0.50 0.65 0.80 V
T
80 – – W.sec