NTE NTE2327 Datasheet

NTE2327

Silicon NPN Transistor

High Voltage, High Speed Switch

Description:

The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters,
inverters, switching regulators, motor control systems and switching applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage (VBE = 0, Peak value), V
Collector–Emitter Voltage (Open base), V
Emitter–Base Voltage (Open Collector), V
Collector Current, I

C

CEO

EBO

CESM

Continuous 0.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (t

Base Current, I

= 2ms) 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

p

B

Continuous 0.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 0.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Base Current (Peak Value, Note 1), –I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

≤ +60°C), P

MB

stg

J

BM

tot

Thermal Resistance, Junction–to–Mounting Base, R
Thermal Resistance, Junction–to–Ambient, R

thJA

Note 1. Turn–Off current.

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJMB

1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

100K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current (Note 2) I

Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V
Collector–Emitter Sustaining Voltage V
Transition Frequency f
Turn–On Time t
Storage Time t
Fall Time t

(TJ = +25°C unless otherwise specified)

V

CES

EBO

FE

CE(sat)IC

BE(sat)IC

CEO(sus)IC

T

on

s

f

= 1000V, VBE = 0 – – 100 µA

CEM

V

= 1000V, VBE = 0, TJ = +125°C – – 1 mA

CEM

IC = 0, VEB = 5V – – 1 mA
IC –= 50mA, VCE = 5V – 50 –

= 0.1A, IB = 10mA – – 0.8 V

IC = 0.2A, IB = 20mA – – 1.0 V

= 0.2A, IB = 20mA – – 1.0 V

= 100mA, I
IC = 50mA, VCE = 10V, f = 1MHz – 20 – MHz
I

= 0.2A, VCC = 250V,

Con

I

= 20mA, –I

Bon

Note 2. Measured with a half sine–wave voltage.

= 0, L = 25mH 450 – – V

Boff

– 0.25 0.50 µs

= 40mA

Boff

– 2.0 3.5 µs
– 0.4 1.3 µs

.450

(11.4)

Max

.655

(16.6)

Max

.330 (8.38) Max

.175

(4.45)

Max

.118

(3.0)

Dia

.030 (.762) Dia

.130 (3.3)

Max

ECB

.090 (2.28)