NTE NTE2327 Datasheet
NTE2327
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters,
inverters, switching regulators, motor control systems and switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0, Peak value), V
Collector–Emitter Voltage (Open base), V
Emitter–Base Voltage (Open Collector), V
Collector Current, I
C
CEO
EBO
CESM
Continuous 0.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
Base Current, I
= 2ms) 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
B
Continuous 0.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 0.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Base Current (Peak Value, Note 1), –I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
≤ +60°C), P
MB
stg
J
BM
tot
Thermal Resistance, Junction–to–Mounting Base, R
Thermal Resistance, Junction–to–Ambient, R
thJA
Note 1. Turn–Off current.
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJMB
1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
100K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current (Note 2) I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Emitter Sustaining Voltage V
Transition Frequency f
Turn–On Time t
Storage Time t
Fall Time t
(TJ = +25°C unless otherwise specified)
V
CES
EBO
FE
CE(sat)IC
BE(sat)IC
CEO(sus)IC
T
on
s
f
= 1000V, VBE = 0 – – 100 µA
CEM
V
= 1000V, VBE = 0, TJ = +125°C – – 1 mA
CEM
IC = 0, VEB = 5V – – 1 mA
IC –= 50mA, VCE = 5V – 50 –
= 0.1A, IB = 10mA – – 0.8 V
IC = 0.2A, IB = 20mA – – 1.0 V
= 0.2A, IB = 20mA – – 1.0 V
= 100mA, I
IC = 50mA, VCE = 10V, f = 1MHz – 20 – MHz
I
= 0.2A, VCC = 250V,
Con
I
= 20mA, –I
Bon
Note 2. Measured with a half sine–wave voltage.
= 0, L = 25mH 450 – – V
Boff
– 0.25 0.50 µs
= 40mA
Boff
– 2.0 3.5 µs
– 0.4 1.3 µs
.450
(11.4)
Max
.655
(16.6)
Max
.330 (8.38) Max
.175
(4.45)
Max
.118
(3.0)
Dia
.030 (.762) Dia
.130 (3.3)
Max
ECB
.090 (2.28)
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