NTE NTE2325 Datasheet

Features:

D High Reverse Voltage: V
D High Speed Switching: t

NTE2325

Silicon NPN Transistor

High Voltage Switch

= 900V (Max)

CBO

= 0.7µs (Max)

f

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

Peak Collector Current (Note 1), i
Base Current, I

B

Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

(TA = +25°C unless otherwise specified)

CBO

CEO

cp

= +25°C), P

C

J

stg

C

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V

(TA = +25°C unless otherwise specified)

(BR)CBOIC
(BR)CEO
(BR)EBOIE

CBO
EBO

CEO(sus)IC

V

CEX(sus)1IC

V

CEX(sus)2IC

= 1mA, IE = 0 900 – – V

IC = 5mA, RBE = ∞

= 1mA, IC = 0 7 – – V
VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA

= 3A, L = 500µH, IB = 1A 800 – – V

= 1A, IB1 = 200mA, IB2 = –200mA,
L = 2mH, Clamped

= 500mA, IB1 = 100mA, IB2 = –100mA,
L = 5mH, Clamped

900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800 – – V

800 – – V

900 – – V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

Dynamic Characteristics

Current Gain–Bandwidth Product f
Output Capactiance C

Switching Characteristics

Turn–On Time t
Storage Time t
Fall Time t

FE1
FE2

T
ob

on

stg

f

VCE = 5V, IC = 200mA 10 – –
VCE = 5V, IC = 1A 8 – –

= 1.5A, IB = 300mA – – 2.0 V
= 1.5A, IB = 300mA – – 1.5 V

VCE = 10V, IC = 200mA – 15 – MHz
VCB = 10V, f = 1MHz – 60 – pF

IC = 2A, IB1 = 400mA, IB2 = 800mA,
RL = 200Ω, VCC = 400V

– 1.0 – µs
– 3.0 – µs
– 0.7 – µs

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.100 (2.54) Collector/Tab

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter