NTE NTE2322 Datasheet

Silicon PNP Transistor

Quad, General Purpose

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

Derate Above 25°C 6.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

Derate Above 25°C 19mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Reistance, Junction–to–Ambient, R

CEO

CBO

EBO

C

= +25°C, Each Transistor), P

A

= +25°C, Total Device), P

A

J

stg

NTE2322

D

thJA

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

0.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.9W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

66°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO
EBO

FE

CE(sat)IC

BE(sat)

= 10mA, IB = 0, Note 1 40 – – V
= 10µA, IE = 0 60 – – V

= 10µA, IC = 0 5 – – V
VCB = 30V, IE = 0 – – 50 nA
VEB = 3V, IE = 0 – – 50 nA

VCE = 10V, IC = 10mA 75 – –
VCE = 10V, IC = 150mA 100 – –
VCE = 10V, IC = 300mA 30 – –

= 150mA, IB = 15mA – – 0.4 V
IC = 300mA, IB = 30mA – – 1.6 V
IC = 150mA, IB = 15mA – – 1.5 V
IC = 300mA, IB = 30mA – – 2.6 V

Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C

Collector

Base

Emitter

N.C.

Collector

T

obo

ibo

Pin Connection Diagram

VCE = 20V, IC = 50mA, f = 100MHz 200 – – MHz
VCB = 10V, IE = 0, f = 1MHz – – 8 pF
VEB = 2V, IC = 0, f = 1MHz – – 30 pF

1
2

3
4
5Emitter
6Base
7

Collector

14
13

Base

12

Emitter

11

N.C.

10

Emitter

9 Base
8

Collector

14 8

17

.785 (19.95) Max

.300 (7.62)

.200 (5.08)

Max

.100 (2.45)

.099 (2.5) Min

.600 (15.24)