NTE NTE2322 Datasheet
Silicon PNP Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 6.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 19mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Reistance, Junction–to–Ambient, R
CEO
CBO
EBO
C
= +25°C, Each Transistor), P
A
= +25°C, Total Device), P
A
J
stg
NTE2322
D
thJA
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
0.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.9W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
66°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
EBO
FE
CE(sat)IC
BE(sat)
= 10mA, IB = 0, Note 1 40 – – V
= 10µA, IE = 0 60 – – V
= 10µA, IC = 0 5 – – V
VCB = 30V, IE = 0 – – 50 nA
VEB = 3V, IE = 0 – – 50 nA
VCE = 10V, IC = 10mA 75 – –
VCE = 10V, IC = 150mA 100 – –
VCE = 10V, IC = 300mA 30 – –
= 150mA, IB = 15mA – – 0.4 V
IC = 300mA, IB = 30mA – – 1.6 V
IC = 150mA, IB = 15mA – – 1.5 V
IC = 300mA, IB = 30mA – – 2.6 V
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C
Collector
Base
Emitter
N.C.
Collector
T
obo
ibo
Pin Connection Diagram
VCE = 20V, IC = 50mA, f = 100MHz 200 – – MHz
VCB = 10V, IE = 0, f = 1MHz – – 8 pF
VEB = 2V, IC = 0, f = 1MHz – – 30 pF
1
2
3
4
5Emitter
6Base
7
Collector
14
13
Base
12
Emitter
11
N.C.
10
Emitter
9 Base
8
Collector
14 8
17
.785 (19.95) Max
.300 (7.62)
.200 (5.08)
Max
.100 (2.45)
.099 (2.5) Min
.600 (15.24)
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