NTE NTE2321 Datasheet
Silicon NPN Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 5.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 15.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
CEO
CBO
EBO
C
= +25°C, Each Transistor), P
A
= +25°C, Total Device), P
A
stg
NTE2321
J
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
0.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.9W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics
DC Current Gain h
Collector–Emitter Saturation Voltage V
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
EBO
FE
CE(sat)IC
T
obo
ibo
VCB = 50V, IE = 0 – – 50 nA
VEB = 3V, IE = 0 – – 50 nA
VCE = 10V, IC = 10mA 75 – –
VCE = 10V, IC = 150mA 100 – –
VCE = 10V, IC = 300mA 30 – –
IC = 300mA, IB = 30mA – – 1.6 V
VCE = 20V, IC = 20mA, f = 100MHz,
Note 1
VBE = 19V, IE = 0, f = 1MHz – 4.5 8.0 pF
VBE = 0.5V, IC = 0, f = 1MHz – 17 30 pF
= 10mA, IB = 0, Note 1 40 – – V
= 10µA, IE = 0 60 – – V
= 10µA, IC = 0 5 – – V
= 150mA, IB = 15mA – – 0.4 V
200 350 – MHz
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Switching Characteristics
Turn–On Time t
Turn–Off Time t
Collector
Base
Emitter
N.C.
Collector
on
off
Pin Connection Diagram
VCC = 30V, V
= 150mA, IB1 = 15mA
I
C
VCC = 30V, IC = 150mA,
= IB2 = 15mA
I
B1
1
2
3
4
5Emitter
6Base
7
BE(off)
14
13
12
11
10
9 Base
8
Collector
Base
Emitter
N.C.
Emitter
Collector
= 0.5V,
– 25 – ns
– 250 – ns
14 8
17
.785 (19.95) Max
.300 (7.62)
.200 (5.08)
Max
.100 (2.45)
.099 (2.5) Min
.600 (15.24)
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