NTE NTE2321 Datasheet

Silicon NPN Transistor

Quad, General Purpose

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

Derate Above 25°C 5.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

Derate Above 25°C 15.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

CEO

CBO

EBO

C

= +25°C, Each Transistor), P

A

= +25°C, Total Device), P

A

stg

NTE2321

J

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

D

0.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.9W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I

ON Characteristics

DC Current Gain h

Collector–Emitter Saturation Voltage V

Small–Signal Characteristics

Current Gain–Bandwidth Product f

Output Capacitance C
Input Capacitance C

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO
EBO

FE

CE(sat)IC

T

obo

ibo

VCB = 50V, IE = 0 – – 50 nA
VEB = 3V, IE = 0 – – 50 nA

VCE = 10V, IC = 10mA 75 – –
VCE = 10V, IC = 150mA 100 – –
VCE = 10V, IC = 300mA 30 – –

IC = 300mA, IB = 30mA – – 1.6 V

VCE = 20V, IC = 20mA, f = 100MHz,
Note 1

VBE = 19V, IE = 0, f = 1MHz – 4.5 8.0 pF
VBE = 0.5V, IC = 0, f = 1MHz – 17 30 pF

= 10mA, IB = 0, Note 1 40 – – V
= 10µA, IE = 0 60 – – V
= 10µA, IC = 0 5 – – V

= 150mA, IB = 15mA – – 0.4 V

200 350 – MHz

Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Switching Characteristics

Turn–On Time t

Turn–Off Time t

Collector

Base

Emitter

N.C.

Collector

on

off

Pin Connection Diagram

VCC = 30V, V

= 150mA, IB1 = 15mA

I

C

VCC = 30V, IC = 150mA,

= IB2 = 15mA

I

B1

1
2

3
4
5Emitter
6Base
7

BE(off)

14
13

12
11
10

9 Base
8

Collector
Base

Emitter
N.C.
Emitter

Collector

= 0.5V,

– 25 – ns

– 250 – ns

14 8

17

.785 (19.95) Max

.300 (7.62)

.200 (5.08)

Max

.100 (2.45)

.099 (2.5) Min

.600 (15.24)