NTE NTE2320 Datasheet
Silicon NPN/PNP Transistor
Quad, General Purpose Switch, Amp
(Complementary Pair)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Derate Above 25°C 5.18mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 10mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 24mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Reistance, Junction–to–Ambient, R
Each Die 193°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Effective, 4 Die 100°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Reistance, Junction–to–Case, R
Each Die 125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Effective, 4 Die 41.6°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupling Factors, Junction–to–Ambient
Q1–Q4 or Q2–Q3 60%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q1–Q2 or Q3–Q4 24%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupling Factors, Junction–to–Case
Q1–Q4 or Q2–Q3 30%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q1–Q2 or Q3–Q4 20%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
CBO
EBO
C
= +25°C, Each Die, Note 1), P
A
= +25°C, Four Die Equal Power, Note 1), P
A
= +25°C, Each Die, Note 1), P
C
= +25°C, Four Die Equal Power, Note 1), P
C
J
stg
thJC
NTE2320
thJA
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
D
D
0.65W. . . . . . . . . . . . . . . . . . . . . . . . . . .
1.25W. . . . . . . . . . . . . . . .
1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.0W. . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Voltage and current are negative for PNP transistors.
Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
Collector Cutoff Current I
Emitter Cutoff Current IE
ON Characteristics (Note 3)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Output Capacitance
C
NPN
CBO
BO
FE
T
obo
= 10mA, IB = 0, Note 2 30 – – V
= 10µA, IE = 0 60 – – V
= 10µA, IC = 0 5 – – V
VCB = 50V, IE = 0 – – 30 nA
VEB = 3V, IC = 0 – – 30 nA
VCE = 10V, IC = 1mA 50 – –
VCE = 10V, IC = 10mA 75 – –
VCE = 10V, IC = 150mA 100 – –
VCE = 10V, IC = 300mA 20 – –
= 150mA, IB = 15mA – – 0.4 V
IC = 300mA, IB = 30mA – – 01.4 V
IC = 150mA, IB = 15mA – – 1.3 V
IC = 300mA, IB = 30mA – – 2.0 V
VCE = 20V, IC = 50mA, f = 100MHz,
200 350 – MHz
Note 3
VCB = 10V, IE = 0, f = 1MHz – 6.0 8.0 pF
PNP – 4.5 8.0 pF
Input Capacitance
NPN
C
ibo
VEB = 2V, IC = 0, f = 1MHz – 20 30 pF
PNP – 17 30 pF
Switching Characteristics
Turn–On Time t
Turn–Off Time t
on
off
VCC = 30V, VEB = 0.5V, IC = 150mA,
= 15mA
I
B1
VCC = 30V, IC = 150mA,
I
= IB2 = 15mA
B1
– 30 – ns
– 225 – ns
Note 1. Voltage and current are negative for PNP transistors.
Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Loading...