NTE NTE232 Datasheet
NTE232
Silicon PNP Transistor
Darlington Amplifier, Preamp
Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
EBO
Collector–Base Voltage, V
Collector Current, I
C
Total Power Dissipation (T
(TA = +25°C unless otherwise specified)
CES
CBO
= +25°C), P
A
T
Derate above +25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
= +25°C), P
C
T
Derate above +25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature range, T
Storage Temperature range, T
stg
J
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), T
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Forward Current Transfer Ratio h
(BR)CESIC
CBO
EBO
FE
= 100µA, IB = 0 30 – – V
VCB = 30V, IE = 0 – – 100 nA
VBE = 8V, IC = 0 – – 100 nA
IC = 10mA, VCE = 5V 50k – –
IC = 100mA, VCE = 5V 20k – –
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+230°C. . . . . . . . . . . . . . .
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
CE(sat)IC
BE(on)IC
= 100mA, IB = 0.1mA – 0.9 1.5 V
= 100mA, VCE = 5V, Note 1 – 1.45 2.00 V
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Noise Figure NF IC = 1mA, VCE = 5V, RS = 100kΩ,
T
cb
IC = 30mA, VCE = 10V, f =
50MHz
ICB = 10mA, IE = 0, f = 100MHz – 2.5 – pF
f = 1kHz
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
100 125 – MHz
– 2 – dB
.500
(12.7)
Min
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
.021 (.445) Dia Max
E B C
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
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