NTE NTE232 Datasheet

NTE232

Silicon PNP Transistor

Darlington Amplifier, Preamp

Description:

The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type pack­age designed for preamplifier input applications where high impedance is a requirement.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Emitter–Base Voltage, V

EBO

Collector–Base Voltage, V
Collector Current, I

C

Total Power Dissipation (T

(TA = +25°C unless otherwise specified)

CES

CBO

= +25°C), P

A

T

Derate above +25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

T

Derate above +25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature range, T
Storage Temperature range, T

stg

J

Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), T

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Forward Current Transfer Ratio h

(BR)CESIC

CBO
EBO

FE

= 100µA, IB = 0 30 – – V
VCB = 30V, IE = 0 – – 100 nA
VBE = 8V, IC = 0 – – 100 nA
IC = 10mA, VCE = 5V 50k – –
IC = 100mA, VCE = 5V 20k – –

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+230°C. . . . . . . . . . . . . . .

Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V

CE(sat)IC

BE(on)IC

= 100mA, IB = 0.1mA – 0.9 1.5 V

= 100mA, VCE = 5V, Note 1 – 1.45 2.00 V

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Current Gain–Bandwidth Product f

Output Capacitance C
Noise Figure NF IC = 1mA, VCE = 5V, RS = 100kΩ,

T

cb

IC = 30mA, VCE = 10V, f =
50MHz

ICB = 10mA, IE = 0, f = 100MHz – 2.5 – pF

f = 1kHz

.135 (3.45) Min

.210

(5.33)

Max

Seating Plane

100 125 – MHz

– 2 – dB

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

.021 (.445) Dia Max

E B C

.050 (1.27)

.165
(4.2)

Max

.105 (2.67) Max