NTE NTE2319 Datasheet

NTE2319

Silicon NPN Transistor

High Voltage, High Speed Power Switch

Description:

The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
switchmode applications.

Features:

D Fast Turn–On Times @ TC = +100°C:

Inductive Fall Time: 50ns Typ
Inductive Crossover Time: 90ns Typ
Inductive Storage Time: 800ns Typ

D 100°C Performance Specified for:

Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current

Applications:

D Switching Regulators
D Inverters
D Solenoids
D Relay Drivers
D Motor Controls
D Deflection Circuits

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO
CEV

EB

Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation, P

D

TC = +25°C 175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +100°C 100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Derate Above 25°C 1W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse Test: Pulse Width ≤ 5µs, Duty Cycle ≥ 10%.

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

850V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+275°C. . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V

CEO(sus)

Collector Cutoff Current I

I
Emitter Cutoff Current I
ON Characteristics (Note 2)
Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

DC Current Gain h

Dynamic Characteristics

Output Capacitance C

Switching Characteristics

Resistive Load (Table 1)
Delay Time t
Rise Time t
Storage Time t
Fall Time t
Storage Time t
Fall Time t
Inductive Load (Table 2)
Storage Time t
Fall Time t
Crossover Time t
Storage Time t
Fall Time t
Crossover Time t

CEV

CER
EBO

FE

sv

sv

Table 2, IC = 100mA, IB = 0 450 – – V
V

CEV

V

BE(off)

= 850V,

= 1.5V

TC = +25°C – – 0.25 mA

TC = +100°C – – 1.5 mA
VCE = 850V, RBE = 50Ω, TC = +100°C – – 2.5 mA
VEB = 6V, IC = 0 – – 1.0 mA

= 5A, IB = 700mA – – 2.5 V

IC = 10A, IB = 1.3A TC = +25°C – – 3.0 V

TC = +100°C – – 3.0 V

= 10A, IB = 1.3A TC = +25°C – – 1.5 V

TC = +100°C – – 1.5 V
IC = 15A, VCE = 5V 5 – –

VCB = 10V, IE = 0, f

ob

IC = 10A, IB2 = 2.6A,

d

VCC = 250V,

r

IB1 = 1.3A,

I = 1.3A,
PW = 30νs,

s

Duty Cycle ≤ 2%

f

s

f

= 1kHz – – 400 pF

test

RB = 1.6Ω

V

BE(off)

= 5V

IC = 10A, TC = +100°C
IB1 = 1.3A,

fi
c

V

V = 5V,
V

BE(off)
CE(pk)

CE(pk)

= 5V,
= 400V

TC = +150°C

fi
c

– 20 – ns
– 200 – ns
– 1200 – ns
– 200 – ns
– 650 – ns
– 80 – ns

– 800 1800 ns
– 50 200 ns
– 90 250 ns
– 1050 – ns
– 70 – ns
– 120 – ns

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.