NTE NTE2318 Datasheet
NTE2318
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode
in a TO218 type package. This device is specifically designed for use in large screen color deflection
circuits.
Features:
D Collector–Emitter Voltage: VCE = 1500V
D Collector–Emitter Sustaining Voltage: V
D Switching Time with Inductive Loads: t
CEO(sus)
= 0.5µs (Typ) @ IC = 4.5A
f
D Internal Flyback Diode
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO(sus)
CES
EB
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
D
Derate Above 25°C 1W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
J
stg
thJC
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
= 700V
700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+275°C. . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter–Base Leakage Current I
(TC = +25°C, unless otherwise specified)
CEO(sus)IC
CES
EBO
VCE = 1500V, VBE = 0 – – 0.1 mA
VCE = 1500V, VBE = 0,
T
VEB = 6V, IC = 0 – – 300 mA
= 100mA, IB = 0 700 – – V
– – 2.0 mA
= +125°C
C
Electrical Characteristics (Cont’d): (TC = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
FE
IC = 4.5A, VCE = 5V 2.25 – –
= 4.5A, IB = 2A – – 1 V
= 4.5A, IB = 2A – – 1.3 V
Dynamic Characteristics
Current–Gain Bandwidth Product f
Output Capacitance C
T
ob
IC = 0.1A, VCE = 5V, f = 1MHz – 7 – MHz
VCB = 10V, IE = 0, f = 0.1MHz – 125 – pF
Switching Characteristics
Storage Time t
Fall Time t
s
IC = 4.5A, IB = 1.8A,
LB = 10µH
f
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
.600
(15.24)
.060 (1.52)
.173 (4.4)
– 8.0 – µs
– 0.5 – µs
C
.156
(3.96)
Dia.
BCE
.216 (5.45)
.550
(13.97)
.055 (1.4)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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