NTE NTE2316 Datasheet
NTE2316
Silicon NPN Transistor
Fast Switching Power Darlington
Description:
The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type
package designed for use in automotive ignition applications and inverter circuits for motor controls.
Applications:
D Automotive Ignition Applications
D Invert Circuits for Motor Controls
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), V
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Collector Current, I
C
B
= 0), V
C
= 0), V
EBO
CES
CEO
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Power Dissipation (T
B
≤ +25°C), P
C
tot
Maximum Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
stg
thJC
J
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
105W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CES
I
CEO
EBO
= 100mA, IB = 0, Note 1 450 – – V
TJ = +25°C
TJ = +125°C
VCE = 450V, IB = 0 – – 1 mA
IC = 0, VEB = 5V – – 20 mA
VCE = 500V,
VBE = 0
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
– – 1 mA
– – 5 mA
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 5A, IB = 50mA, Note 1 – – 1.8 V
IC = 7A, IB = 140mA, Note 1 – – 1.8 V
Base–Emitter Saturation Voltage V
BE(sat)IC
= 5A, IB = 50mA, Note 1 – – 2.2 V
IC = 7A, IB = 140mA, Note 1 – – 2.2 V
Diode Forward Voltage V
IF = 7A, Note 1 – – 2.5 V
F
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
C
.156
(3.96)
Dia.
BCE
.216 (5.45)
.550
(13.97)
.055 (1.4)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
B
800Ω
50Ω
E
NOTE: Dotted line indicates that
case may have square corners
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