NTE NTE2315 Datasheet
NTE2315
Silicon NPN Transistor
Fast Switching Power Darlington
Description:
The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package
with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast
switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110°
CRT video displays and is primarily intended for large screen displays.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), V
Collector–Emitter Voltage (V
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Collector Current, I
C
B
= 0), V
C
BE
CBO
= –6V), V
= 0), V
EBO
CEV
CEO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Damper Diode Peak Forward Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperatuere Range, T
Thermal Resistance, Junction–to–Case, R
B
DM
≤ +25°C), P
C
stg
tot
J
thJC
Thermal Resistance, Junction–to–Ambient, R
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.08°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h
CEO(sus)IC
CES
I
CEV
EBO
CE(sat)IC
BE(sat)IC
FE
VCE = 400V, VBE = 0 – – 100 µA
VCE = 400V, VBE = –6V – – 100 µA
VEB = 6V, IC = 0 – – 3 mA
= 100mA, IB = 0, Note 1 200 – – V
= 5A, IB = 50mA, Note 1 – – –1.5 V
= 5A, IB = 50mA, Note 1 – – 2.0 V
IC = 3A, VCE = 5V – 3500 –
Note 1. Pulse test: Pulse Duration = 300µs, Duty Cycle = 1.5%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Damper Diode Forward Voltage V
Turn–Off Time t
off
IF = 4A, Note 1 – – 2 V
F
IC = 5A, IB1 = 50mA – 0.4 1.0 µs
Resistive Load
Turn–On Time t
Storage Time t
Fall Time t
on
IC = 5A, IB1 = 50mA,
IB2 = –500mA, VCC = 100V
s
f
Note 1. Pulse test: Pulse Duration = 300µs, Duty Cycle = 1.5%.
.420 (10.67)
Max
– 0.35 – µs
– 0.55 – µs
– 0.20 – µs
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
C
B
D2
D1
.250 (6.35)
Max
R1 R2
E
.500
(12.7)
Min
.070 (1.78) Max
Base
Emitter
.100 (2.54) Collector/Tab
Loading...