NTE NTE2313 Datasheet

NTE2313

Silicon NPN Transistor

High Speed Switch

Description:

The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220
type package designed for use in converters, inverters, switching regulators, motor control systems,
and switching applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO(sus)
CES

EBO

Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 0.75A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Reverse Base Current, –I
Total Power Dissipation (T

BM

= +25°C), P

C

tot

Derate Above 25°C 400mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature range, T

stg

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

J

thJC

thJA

Lead Temperature (During Soldering, 1/8” from case, 5sec), T

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+275°C. . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

(TC = +25°C unless otherwise specified)

CEO(sus)IC

CES

EBO

= 100mA, L = 25mH 450 – – V
VCS = 1000V – – 0.2 mA
VCS = 1000V, TC = +125°C – – 1.5 mA
IC = 0, VEB = 5V – – 1 mA

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 2)

DC Current Gain h
Collector–Emitter Saturation Voltage V

FE

CE(sat)IC

IC = 0.1A, VCE = 5V 30 50 –

= 0.3A, IB = 30mA – – 0.8 V
IC = 1A, IB = 200mA – – 1.0 V

Base–Emitter Saturation Voltage V

BE(sat)IC

= 1A, IB = 0.2A – – 1.1 V

Dynamic Characteristics

Current–Gain Bandwidth Product f

IC = 500mA, VCE = 10V, f = 1MHz 4 – – MHz

T

Switching Characteristics

Turn–On Time t
Storage Time t
Fall Time t

on

VCC = 250V, IC = 1A, IB1 = 0.2A,
IB2 = 0.4A

s

f

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

.420 (10.67)

Max

– 0.3 0.5 µs
– 2.0 3.5 µs
– 0.3 – µs

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.100 (2.54) Collector/Tab

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter