NTE NTE2311 Datasheet

NTE2311

Silicon NPN Transistor

High Voltage, High Speed Switch

Description:

The NTE2311 is a silicon NPN transistor in a T O218 type case designed for use in high voltage, high
speed switching applications.

Features:

D High Blocking Capability: V
D Wide Surge Area: I

= 55A @ 350V

CSM

Applications:

D Switchmode Power Supply
D DC/DC and DC/AC Converters
D Motor Control

= 1000V

CEX

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage (VBE = –2.5V), V
Emitter–Base Voltage, V

EBO

Collector Current (tp ≤ 5ms), I

(TC = +25°C unless otherwise specified)

CEO

CEX

C

Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current (t

≤ 5ms), I

p

B

Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, P

tot

TC = +25°C 150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +60°C 115W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R

J
thJC

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

CEO(sus)IB

(BR)EBOIC

CEX

= 0, IC = 200mA, L = 25mH 450 – – V

= 0, IE = 50mA 7 – 30 V
TJ = +25°C
TJ = +125°C

VCE = V
VBE = –2.5V

CEX

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

,

– – 0.2 mA
– – 2.0 mA

I

CER

TJ = +25°C
TJ = +125°C

VCE = V
RBE = 10Ω

CEX

,

– – 0.5 mA
– – 4.0 mA

Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)

µ

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Cont,d)

Emitter Cutoff Current I

EBO

IC = 0, VBE = –5V – – 1 mA

ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V

FE

CE(sat)IC

IC = 8Adc, VCE = 5Vdc) 10 – – –

= 8A, IB = 1.6A – – 1.5 V
IC = 12A, IB = 2.4A – – 5.0 V

Base–Emitter Saturation Voltage V

BE(sat)IC

= 8A, IB = 1.6A – – 1.6 V

Switching Characteristics (Switching Times on Resistive Load)
Turn–On Time t
Storage Time t
Fall Time t

on

s

VCC = 150V, IC = 8A,
IB1 = –IB2 = 1.6A

f

Switching Characteristics (Switching Times on Inductive Load)
Storage Time t

Fall Time t

s

f

TJ = +25°C
TJ = +125°C
TJ = +25°C
TJ = +125°C

VCC = 300V,
VBB = –5V,
L = 3

LB = 3µH,
I
I

Note 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%

= 8A,

C
Bend

H,

= 1.6A

– 0.55 1.0 µs
– 1.5 3.0 µs
– 0.3 0.8 µs

– 3.5 – µs
– – 5.0 µs
– 0.08 – µs
– – 0.4 µs

.600

(15.24)

C

.156

(3.96)

Dia.

BCE

.216 (5.45)

.173 (4.4)

.550

(13.97)

.055 (1.4)

.060 (1.52)

.430

(10.92)

.500

(12.7)

Min

.015 (0.39)

NOTE: Dotted line indicates that
case may have square corners