NTE NTE2311 Datasheet
NTE2311
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2311 is a silicon NPN transistor in a T O218 type case designed for use in high voltage, high
speed switching applications.
Features:
D High Blocking Capability: V
D Wide Surge Area: I
= 55A @ 350V
CSM
Applications:
D Switchmode Power Supply
D DC/DC and DC/AC Converters
D Motor Control
= 1000V
CEX
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage (VBE = –2.5V), V
Emitter–Base Voltage, V
EBO
Collector Current (tp ≤ 5ms), I
(TC = +25°C unless otherwise specified)
CEO
CEX
C
Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current (t
≤ 5ms), I
p
B
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
tot
TC = +25°C 150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +60°C 115W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R
J
thJC
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
CEO(sus)IB
(BR)EBOIC
CEX
= 0, IC = 200mA, L = 25mH 450 – – V
= 0, IE = 50mA 7 – 30 V
TJ = +25°C
TJ = +125°C
VCE = V
VBE = –2.5V
CEX
450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
,
– – 0.2 mA
– – 2.0 mA
I
CER
TJ = +25°C
TJ = +125°C
VCE = V
RBE = 10Ω
CEX
,
– – 0.5 mA
– – 4.0 mA
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
µ
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Cont,d)
Emitter Cutoff Current I
EBO
IC = 0, VBE = –5V – – 1 mA
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
FE
CE(sat)IC
IC = 8Adc, VCE = 5Vdc) 10 – – –
= 8A, IB = 1.6A – – 1.5 V
IC = 12A, IB = 2.4A – – 5.0 V
Base–Emitter Saturation Voltage V
BE(sat)IC
= 8A, IB = 1.6A – – 1.6 V
Switching Characteristics (Switching Times on Resistive Load)
Turn–On Time t
Storage Time t
Fall Time t
on
s
VCC = 150V, IC = 8A,
IB1 = –IB2 = 1.6A
f
Switching Characteristics (Switching Times on Inductive Load)
Storage Time t
Fall Time t
s
f
TJ = +25°C
TJ = +125°C
TJ = +25°C
TJ = +125°C
VCC = 300V,
VBB = –5V,
L = 3
LB = 3µH,
I
I
Note 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
= 8A,
C
Bend
H,
= 1.6A
– 0.55 1.0 µs
– 1.5 3.0 µs
– 0.3 0.8 µs
– 3.5 – µs
– – 5.0 µs
– 0.08 – µs
– – 0.4 µs
.600
(15.24)
C
.156
(3.96)
Dia.
BCE
.216 (5.45)
.173 (4.4)
.550
(13.97)
.055 (1.4)
.060 (1.52)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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