NTE NTE2310 Datasheet
NTE2310
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for
use in high voltage, fast switching industrial applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), V
Collector–Emitter Voltage (I
Collector Current, I
C
= 0), V
B
CES
CEO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
Base Current, I
≤ 2ms) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
B
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (tp ≤ 2ms) 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
= +25°C), P
C
D
J
stg
Thermal Resistance, Junction–to–Case, R
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
1000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Charactertistics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Turn–On Time t
Storage Time t
Fall Time t
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CES
EBO
CE(sat)IC
BE(sat)IC
on
s
f
= 100mA, L = 25mH, Note 1 400 – – V
VCE = 1000V, VBE = 0 – – 1 mA
VCE = 1000V, VBE = 0, TC = +125°C – – 3 mA
VEB = 9V, IC = 0 – – 10 mA
= 6A, IB = 1.2A, Note 1 – – 1.5 V
= 6A, IB = 1.2A, Note 1 – – 1.5 V
IC = 6A, IB1 = 1.2A, IB2 = 1.2A – – 1 µs
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
– – 4 µs
– – 0.8 µs
(15.24)
C
.600
.060 (1.52)
.173 (4.4)
.156 (3.96)
Dia.
BCE
.216 (5.45)
.550
(13.97)
.055 (1.4)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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