NTE NTE2309 Datasheet
High Voltage, High Current Switch
Features:
D High Breakdown Voltage
D Fast Switching Speed
D Wide ASO
NTE2309
Silicon NPN Transistor
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Collector Dissipation (T
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
B
= +25°C), P
A
= +25°C), P
C
stg
C
C
J
Note 1. Pules test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
CBO
EBO
FE
VCB = 400V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 0.4A 10 – –
VCE = 5V, IC = 2A 8 – –
900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current Gain–Bandwidth Product f
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Output Capacitance C
CE(sat)IC
BE(sat)IC
T
ob
VCE = 10V, IC = 0.4A – 15 – MHz
= 3A, IB = 0.6A – – 2.0 V
= 3A, IB = 0.6A – – 1.5 V
VCB = 10V, f = 1MHz – 120 – pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
Turn–On Time t
Storage Time t
Fall Time t
(BR)CBOIC
(BR)CBOIC
(BR)EBOIE
CEO(sus)IC
V
CEX(sus)IC
on
stg
= 1mA, IE = 0 900 – – V
= 5mA, RBE = ∞ 800 – – V
= 1mA, IC = 0 7 – – V
= 6A, IB = 2A, L = 200µH 800 – – V
= 2A, IB1 = 0.4A, L= 1mH,
= –0.4A, Clamped
I
B2
IC = 1A, IB1 = 0.2A, L= 2mH,
= –0.2A, Clamped
I
B2
VCC = 400V, IC = 4A, IB1 = 0.8A,
IB2 = –1.6A, RL = 100Ω
f
.615 (15.62).190 (4.82)
C
800 – – V
900 – – V
– – 1.0 µs
– – 3.0 µs
– – 0.7 µs
.787
(20.0)
.591
(15.02)
.787
(20.0)
.126
(3.22)
Dia
BCE
.215 (5.47)
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