NTE NTE2307 Datasheet
NTE2307
Silicon NPN Transistor
High Gain Power Amp
Features:
D High Voltage
D High DC Current Gain
D High Collector Power Dissipation Capability
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
B
EBO
C
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Breakdown Voltage V
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Voltage V
(TA = +25°C unless otherwise specified)
CBO
CEO
= +25°C), P
C
J
stg
(TA = +25°C unless otherwise specified)
C
CBO
I
CEO
EBO
(BR)CEOIC
FE
CE(sat)IC
BE
VCB = 200V, IE = 0 – – 100 µA
VCE = 180V, IB = 0 – – 10 mA
VEB = 5V, IC = 0 – – 100 µA
VCB = 5V, IC = 1A 500 – 2000
VCE = 5V, IC = 1A 0.6 0.7 0.8 V
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50mA, IB = 0 180 – – V
= 1A, IB = 20mA – – 1.0 V
.787
(20.0)
.591
(15.02)
.615 (15.62).190 (4.82)
C
.126
(3.22)
Dia
.787
(20.0)
BCE
.215 (5.47)
Loading...