NTE NTE2305 Datasheet
NTE2305 (NPN) & NTE2306 (PNP)
Silicon Complementary Transistors
High Voltage Power Amplifier
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type
package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
Features:
D High Collector–Emitter Sustaining Voltage: V
D High DC Current Gain: h
= 35 Typ @ IC = 8A
FE
D Low Collector–Emitter Saturation Voltage: V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Power Dissipation (T
C
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
B
= +25°C), P
stg
D
J
thJC
CEO(sus)
CE(sat)
= 160V
= 2V Max @ IC = 8A
160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width ≤ 5ms, Duty Cycle ≥ 10%.
Electrical Charactertistics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector–Emitter Cutoff Current I
Emitter–Base Cutoff Current I
Collector–Base Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEX
I
CEO
EBO
CBO
= 200mA, IB = 0, Note 2 160 – – V
VCE = 160V, V
VCE = 160V, V
VCE = 80V, IB = 0 – – 750 µA
VBE = 7V, IC = 0 – – 1.0 mA
VCB = 160V, IE = 0 – – 750 µA
= 1.5V – – 0.1 mA
EB(off)
= 1.5V, TC = +150°C – – 5.0 mA
EB9off)
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≥ 2%.
Electrical Charactertistics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain h
FE
VCE = 2V, IC = 8A 15 35 –
VCE = 4V, IC = 16A 8 15 –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 8A, IB = 0.8A – – 2.0 V
IC = 16A, IB = 2A – – 3.5 V
Base–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
BE(sat)IC
BE(on)
= 16A, IB = 2A – – 3.9 V
VCE = 4V, IC = 16A – – 3.9 V
Dynamic Characteristics
Current–Gain Bandwidth Product f
T
VCE = 20V, IC = 1A, f = 0.5MHz,
Note 3
Output Capacitance C
ob
VCB = 10V, IE = 0, f = 0.1MHz – – 800 pF
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≥ 2%.
Note 3. f
= |hFE| S f
T
test
.
.600
(15.24)
.060 (1.52)
.173 (4.4)
1.0 – – MHz
C
.156
(3.96)
Dia.
BCE
.216 (5.45)
.550
(13.97)
.055 (1.4)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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