NTE NTE2303 Datasheet

NTE2303

Silicon NPN Transistor

Horizontal Deflection

Description:

The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen
black and white deflection circuits.

Features:

D Collector–Emitter Voltage: V
D Glassivated Base–Collector Junction
D Switching Times with Inductive Loads: t

Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V

CEO(sus)
CEX

EBO

Continuous Collector Current, I
Continuous Base Current, I
Continuous Emitter Current, I
Total Power Dissipation (T

B

E

= +25°C), PD 65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Derate above 25°C 0.65W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R

= 1500V

CEX

= 0.65µs (Typ) @ IC = 2A

f

C

4.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

stg

thJC

–65° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.54°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 1)

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

: (TC = +25°C unless otherwise specified)

CEO(sus)IC

CES
EBO

CE(sat)IC
BE(sat)IC

= 50mA, IB = 0 750 – – V
VCE = 1500V, VBE = 0 – – 1.0 mA
VEB = 5V, IC = 0 – – 0.1 mA

= 2A, IB = 660mA – – 5.0 V

= 2A, IB = 660mA – – 1.5 V

Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Output Capacitance C
Current Gain–Bandwidth Product f

Switching Characteristics

Fall Time t

ob
T

VCB = 10V, IE = 0, f = 0.1MHz – 50 – pF
VCE = 5V, Ic = 100mA, f

IC = 2A, IB1 = 600mA, LB = 12µH – 0.65 – µs

f

test

Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.

.420 (10.67)

Max

.147 (3.75)

Dia Max

= 1MHz, Note 1 – 4.0 – MHz

.110 (2.79)

.500

(12.7)

Max

.070 (1.78) Max

Base

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Emitter
Collector/Tab