NTE NTE2301 Datasheet
NTE2301
Silicon NPN Transistor
High Voltage Horizontal Output
Description:
The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large
screen deflection circuits.
Features:
D Collector–Emitter Voltage: V
D Glassivated Base–Collector Junction
D Safe Operating Area @ 50µs = 20A, 400V
D Switching Times with Inductive Loads: t
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
CEO
CEX
EB
Continuous Collector Current, I
Continuous Base Current, I
Continuous Emitter Current, I
Total Power Dissipation, P
B
E
D
TC = +25°C 100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +100°C 40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Derate Above 25°C 0.8W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), T
CEX
C
stg
= 1500V
f
J
thJC
= 0.4µs (Typ) @ IC = 4.5A
750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+275°C. . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CES
EBO
= 50mA, IB = 0 750 – – V
VCE = 1500V, VBE = 0 – – 1 mA
VBE = 5V, IC = 0 – – 1 mA
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 4.5A, IB = 1.8A – – 5 V
IC = 3.5A, IB = 1.5A – – 5 V
Base–Emitter Saturation Voltage V
BE(sat)IC
= 4.5A, IB = 1.8A – – 1.5 V
IC = 3.5A, IB = 1.5A – – 1.5 V
Dynamic Characteristics
Current Gain – Bandwidth Product f
Output Capacitance C
IC = 100mA, VCE = 5V, f
T
VCB = 10V, IE = 0, f = 0.1MHz – 125 – pF
ob
Switching Characteristics
Fall Time t
IC = 4.5A, IB1 = 1.8A, LB = 8µH – 0.4 1.0 µs
f
IC = 4.5A, IB1 = 1.8A, LB = 8µH,
= +100°C
T
C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
= 1MHz – 4 – MHz
test
– 0.6 – µs
.600
(15.24)
C
.156
(3.96)
Dia.
BCE
.216 (5.45)
.060 (1.52)
.173 (4.4)
.550
(13.97)
.055 (1.4)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
Loading...