NTE NTE2300 Datasheet
NTE2300
Silicon NPN Transistor
High Voltage, Horizontal Output
Description:
The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen
color TV deflection circuits.
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
= +25°C), P
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Charactertistics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Current–Gain Bandwidth Product f
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Fall Time t
stg
(TA = +25°C unless otherwise specified)
D
J
CBO
EBO
FE
T
CE(sat)IC
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
f
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 1 mA
VCE = 5V, IC = 1A 8 – –
VCE = 10V, IC = 1A – 3 – MHz
= 4A, IB = 0.8A – – 5.0 V
= 4A, IB = 0.8A – – 1.5 V
= 5mA, IE = 0 1500 – – V
= 100mA, RBE = ∞ 800 – – V
= 200mA, IC = 0 7 – – V
IC = 4A, IB1 = 0.8A, IB2 = –1.6A – – 0.4 µs
.787
(20.0)
.591
(15.02)
.615 (15.62).190 (4.82)
C
.126
(3.22)
Dia
.787
(20.0)
BCE
.215 (5.47)
Loading...