NTE NTE230 Datasheet
NTE230
Silicon Controlled Rectifier (SCR)
TV Deflection Circuit
Features:
D CTV 110° – CRT Horizontal Deflection
D Tracer Switch
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), V
Non–Repetitive Peak Forward Voltage (T
Repetitive Peak Reverse Voltage, V
RMS On–State Current (Note 1), I
RRM
T(RMS)
Average On–State Current (Note 1), I
Surge Current (Note 1), I
TSM
= +100°C), V
J
T(AV)
50Hz 60A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60Hz 70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Critical Rate–of–Rise of On–State Current, di/dt 200A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power Dissipation (Note 2), P
Average Gate Power Dissipation, P
Minimum Peak Reverse Gate Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
GM
G(AV)
GM
J
thJC
DRM
DSM
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Single Phase, Half Sine Wave at 50Hz, T
Note 2. 10µs duration
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
Peak On–State Voltage V
DC Gate Trigger Current I
DRM
TM
GT
V
= 750V, TJ = +100°C – – 1.5 mA
DRM
ITM = 20A, TC = +25°C – – 3.0 V
TC = –40°C VD = 6V, RL = 10Ω – – 50 mA
TC = +25°C – – 30 mA
= +60°C
C
Electrical Characteristics (Cont’d):
Parameter Symbol Test Conditions Min Typ Max Unit
DC Gate Non–Trigger Voltage V
DC Gate Non–Trigger Current I
Holding Current I
Turn–Off Time t
Critical Exponential
dv/dt V
Rate–of–Rise of Forward
Blocking State Voltage
.062 (1.57)
GD
GD
H
q
VD = 750V, TC = +100°C 0.2 – – V
VD = 750V, TC = +100°C 1.0 – – mA
VD = 6V, RL = 10Ω – – 100 mA
ITM = 8A, di/dt = 20A/µs,
= 610V, dv/dt = 700V/µs,
V
D
f = 15.7kHz, T
= 500V, VG = –2.5V,
DRM
= +70°C, RG = 100Ω
T
C
= +70°C, VG = 25V
C
.485 (12.3)
– – 2.5 µs
700 – – V/µs
.295 (7.5)
Dia
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.031 (0.78) Dia
.580 (14.7)
.360
(9.14)
Min
.960 (24.3) Gate
.200
(5.08)
CathodeAnode/Case
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