NTE23
Silicon NPN Transistor
Ultra High Frequency Amp
Description:
The NTE23 is suitable for a low noise amplifier in the VHF to UHF band.
Features:
D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz
D High Power Gain: G
D High Cutoff Frequency: f
15dB Typ. @ f = 500MHz
pe
= 2.0GHz Typ
T
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Total Power Dissipation, P
Junction Temperatur, T
J
Storage Temperature Range, T
: (TA = +25°C unless otherwise specified)
CBO
CEO
EBO
T
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain–Bandwidth Product f
Output Capacitance C
Maximum Available Power Gain G
Noise Figure NF VCE = 10V, IC = 3mA, f = 500MHz – 3.0 4.0 dB
CBO
EBO
FE
VCB = 15V, IE = 0 – – 0.1 µA
VEB = 2V, IC = 0 – – 0.1 µA
VCE = 10V, IC = 10mA 25 80 200 –
VCE = 10V, IC = 10mA 1.5 2.0 – GHz
T
VCB = 10V, IE = 0, f = 1MHz – 0.75 1.1 pF
ob
VCE = 10V, IC = 10mA, f = 500MHz 13 15 – dB
pe
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .