NTE227
Silicon NPN Transistor
High Voltage Amp, Video Output
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Power Dissipation (T
Power Dissipation (T
Maximum Operating Junction Temperature, T
Thermal Resistance, Junction–to–Case (T
Thermal Resistance, Junction–to–Ambient (T
CBO
CEO
EBO
= +25°C), PDmax 850mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
COLLECTOR LEAD
= +25°C), PDmax 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COLLECTOR LEAD
max +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25°C), R
A
= +25°C), R
thJA
thJC
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
62.5°C/W. . . . . . . . . . .
147°C/W. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
Base–Emitter Saturation Voltage V
Capacitance C
CBO
EBO
FE
VCB = 260V – – 100 nA
VEB = 6V – – 100 nA
IC = 1mA, VCE = 10V 25 – –
IC = 10mA, VCE = 10V 40 90 200
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CE(sat)IC
BE(sat)IC
T
BE(sat)IC
IC = 10mA 50 – 200 MHz
ib
= 1mA 300 – – V
= 100µA 300 – – V
= 10µA 6 – – V
= 20mA, IB = 2mA – 0.25 1.0 V
= 20mA, IB = 2mA – 0.74 1.0 V
= 10mA – – 0.76 V
– – 70 pF