NTE NTE226 Datasheet

NTE226

Germanium PNP Transistor

Audio Power Amp

Description:

The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity , high–
power output applications.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage (R
Emitter–Base Voltage, V
Collector Current, I

C

Power Dissipation (T

CBO

BE

EBO

= +25°C), P

C

= 100Ω), V

Operating Junction Temperature, T
Storage Temperature Range, T

stg

CER

C

J

–55° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Small–Signal Current Gain Resistance f
Base Spreading Resistance r

(TA = +25°C unless otherwise specified)

CBO
EBO

FE
ob
bb

VCB = 25V, IE = 0 – – 200 µA
VEB = 6V, IC = 0 – – 200 µA
VCE = 1.5V, IC = 200mA 50 100 275
VCE = 1.5V, IC = 200mA – 0.7 – MHz
VCE = 1.5V, IC = 200mA, f = 6MHz – 15 – Ω

.031

(.792)

.593 (15.08)

Dia

.290 (7.36)

.157 (4.0)

Dia

(2 Places)

.039 (1.0) Dia

.530 (13.5)

.944 (24.0)

.295 (7.5)

Base

.315

(8.0)

Collector/Case

Emitter