NTE NTE222 Datasheet
Field Effect Transistor
Dual Gate N–Channel MOSFET
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Drain Current, I
D
Reverse Gate Current, I
Forward Gate Current, I
Total Device Dissipation (TA = +25°C), P
Derate Above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
Derate Above 25°C 0.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering), T
DS
DG
G
GF
C
= +25°C), P
stg
D
D
L
NTE222
J
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V
Gate 1–Source Breakdown Voltage V
Gate 2–Source Breakdown Voltage V
Gate 1 Leakage Current I
Gate 2 Leakage Current I
Gate 1 to Source Cutoff Voltage V
Gate 2 to Source Cutoff Voltage V
ON Characteristics (Note 2)
Zero–Gate–Voltage Drain Current I
Small–Signal Characteristics
Forward Transfer Admittance |Yfs| VDS = 15V, V
(TA = +25°C unless otherwise specified)
(BR)DSXID
(BR)G1SOIG1
(BR)G2SOIG2
G1SS
G2SS
G1S(off)VDS
G2S(off)VDS
DSS
= 10µA, VG1 = VG2 = –5V 25 – – V
= ±10mA, Note 1 ±6 – ±30 V
= ±10mA, Note 1 ±6 – ±30 V
V
= ±5V, V
G1S
V
= ±5V, V
G2S
= 15V, V
= 15V, V
VDS = 15V, V
f = 1kHz, Note 3
= VDS = 0 – – ±10 nA
G2S
= VDS = 0 – – ±10 nA
G1S
= 4V, ID = 20µA –0.5 – –4.0 V
G2S
= 0V, ID = 20µA –0.2 – –4.0 V
G1S
G2S
G2S
= 4V, V
= 4V, V
= 0V 6 – 30 mA
G1S
= 0V,
G1S
10 – 22 mmhos
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur-
rent. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30µs, Duty Cycle ≤ 2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Characteristics (Cont’d)
Input Capacitance C
iss
VDS = 15V, V
= 4V, ID = I
G2S
DSS
,
– 3.3 – pF
f = 1MHz
Reverse Transfer Capacitance C
rss
VDS = 15V, V
= 4V, ID = 10mA,
G2S
0.005 – 0.03 pF
f = 1MHz
Output Capacitance C
oss
VDS = 15V, V
= 4V, ID = I
G2S
DSS
,
– 1.4 – pF
f = 1MHz
Functional Characteristics
Noise Figure NF VDD = 18V, VGG = 7V, f = 200MHz – – 3.5 dB
VDD = 15V, V
= 4V, ID = 10mA,
G2S
– – 5.0 dB
f = 200MHz
Common Source Power Gain G
VDD = 18V, VGG = 7V, f = 200MHz 20 – 28 dB
ps
VDD = 15V, V
= 4V, ID = 10mA,
G2S
14 – – dB
f = 200MHz
Bandwidth BW VDD = 18V, VGG = 7V, f = 200MHz 7 – 12 MHz
Gain Contol Gate–Supply Voltage V
VDD = 18V, fLO = 245MHz,
f
RF
GG(GC)VDD
= 200MHz, Note 5
= 18V, ∆Gps = 300dB,
4 – 7 MHz
0 – –2.0 V
f = 200MHz, Note 4
Note 4. ∆Gps is defined as the change in Gps from the value at VGG = 7V.
Note 5. Amplitude at input from local oscillator is 3V RMS.
.190
(4.82)
.500
(12.7)
Min
Drain
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.018 (0.45) Dia
Gate 2
Gate 1
45°
.040 (1.02)
Source/Case
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