NTE NTE221 Datasheet

NTE221

MOSFET

Dual Gate, N–Channel for

VHF TV Receivers Applications

Description:

The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RF–am­plifier applications.

Features:

D Extremely Low Feedback Capacitance
D High Power Gain

Absolute Maximum Ratings:

Drain–to–Source Voltage, V
Gate 1–to–Source Voltage, V

(TA = +25°C unless otherwise specified)

DS

G1S

Continuous (DC) +1V to –8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak AC +20V to –8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate 2–to–Source Voltage, V

Continuous (DC) –8V to 40% of V

G2S

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak AC –8V to +20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain–to–Gate Voltage, V
Pulsed Drain Current (Note 1), I
Transistor Dissipation (T

or V

DG1

D

= +25°C), P

A

DG2

T

Derate Linearly Above 25°C 2.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Ambient Temperature Range, T
Storage Temperature Range, T

stg

opr

Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), T
Note 1. Pulse test: Pulse Width ≤ 20ms, Duty Cycle ≤ 15%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Gate 1–to–Source Cutoff Voltage V
Gate 2–to–Source Cutoff Voltage V
Gate 1 Leakage Current I
Gate 2 Leakage Current I

(TA = +25°C unless otherwise specified)

(off) VDS = 15V, V

G1S

(off) VDS = 15V, V

G2S

G1SS
G2SS

V
V

G1S
G2S

= 20V, V
= 20V, V

= 4V, ID = 200mA – –2 – V

G2S

= 0, ID = 200mA – –2 – V

G1S

= 0, VDS = 0 – – 1 nA

G2S

= 0, VDS = 0 – – 1 nA

G1S

0 to +20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DS

+20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+265°C. . . . . . . .

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain Current I
Forward Transconductance g

DSS

VDS = 13V, V
VDS = 13V, ID = 10mA, V

fs

G1S

= 0, V

= 4V – 18 – mA

G2S

G2S

= 4V,

– 1000 – µmhos

f = 1kHz

Performance Characteristics: (TA = +25°C, f = 200MHz, Note 2 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Small–Signal, Short Circuit Reverse

Transfer Capacitance
Output Capacitance C
Input Capacitance C
Input Resistance r
Output Resistance r
Magnitude of Forward Transconductance |Yfs| – 11000 – µmhos
Phase Angle of Forward Transadmittance – –46 – deg
Maximum Available Power Gain MAG – 20 – dB
Maximum Usable Power Gain

(Unneutralized)
Power Gain G
Noise Figure NF – – 5 dB

C

oss

iss

oss

(Drain–to–Gate 1) at f = 1MHz – 0.02 0.03 pF

rss

– 2.2 – pF

iss

– 5.5 – pF
– 1.2 – kΩ
– 2.8 – kΩ

MUGuNote 3 – 20 – dB

PS

– 17.5 – dB

Note 2. V

is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, V

G1S

Note 3. Limited by practical design considerations.

.190

(4.82)

.500

(12.7)

Min

.018 (0.45) Dia

Drain

45°

.220 (5.58) Dia

.185 (4.7) Dia

.030 (.762)

Gate 2
Gate 1

G2S

= 4V.

.040 (1.02)

Source/Case