NTE NTE22 Datasheet

Silicon NPN Transistor

AF PO, General Purpose Amp, Driver

Features:

D High Breakdown Voltage: V
D Large I

Capacity: IC = 1A DC

C

D Good hFE Linearity
D Low Collector Saturation Voltage

Applications:

D Medium Power Output Stages
D High–Voltage Drivers

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse (Note 1) 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P
Junction Temperature, T

900mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

+135°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

j

Storage Temperature Range, T
Note 1. P

= 20ms, Duty Cycle = 1/2

W

CEO

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CBO

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CEO

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

NTE22

= 80V

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector Saturation Voltage V
Transition Frequency f
Output Capacitance C

: (TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO
EBO

FE

CE(sat)IC

VCB = 80V – – 1 µA
VEB = 4V – – 1 µA
VCE = 3V, IC = 50mA 120 – 270

VCE = 10V, IC = 50mA – 100 – MHz

T

VCB = 10V, f = 1MHz – 20 – pF

ob

= 1mA 80 – – V
= 50µA 100 – – V
= 50µA 5 – – V

= 500A, IB = 50mA – 0.15 0.4 V

.102 (2.6) .280 (7.11)

.100 (2.54)

E

CB

.185 (4.7)

.138 (3.5)

.022 (0.55).051 (1.29)