NTE NTE219, NTE130 Datasheet
NTE130 (NPN) & NTE219 (PNP)
Silicon Power Transistor
Audio Power Amp, Medium Speed Switch
Description:
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case
designed for general purpose switching and amplifier applications.
Features:
D DC Current Gain: hFE = 20 – 70 @ IC = 4A
D Collector–Emitter Saturation Voltage: V
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I
B
Total Device Dissipation (T
CEO
CER
CB
EB
C
= +25°C), P
C
D
Derate Above 25°C 0.657W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
CE(sat)
J
thJC
= 1.1V (Max) @ IC = 4A
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
115W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.52°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC =+25°C unless otherwise specified)
CEO(sus)IC
CER(sus)
CEO
I
CEX
EBO
= 200mA, IB = 0, Note 1 60 – – V
IC = 200mA, RBE = 100Ω, Note 1
VCE = 30V, IB = 0 – – 0.7 mA
VCE = 100V, V
VCE = 100V, V
VBE = 7V, IC = 0 – – 5.0 mA
= 1.5V – – 1.0 mA
BE(off)
= 1.5V, TC = +150°C – – 5.0 mA
BE(off)
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
70 – – V
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Second Breakdown
Second Breakdown Collector Current
with Base Forward Biased
Dynamic Characteristics
Current Gain–Bandwidth Product f
Small–Signal Current Gain h
Small–Signal Current Gain Cutoff
Frequency
CE(sat)IC
BE(on)IC
FE
I
s/b
f
hfe
IC = 4A, VCE = 4V 20 – 70
IC = 10A, VCE = 4V 5 – –
= 4A, IB = 400mA – – 1.1 V
IC = 10A, IB = 3.3A – – 3.0 V
= 4A, VCE = 4V – – 1.5 V
VCE = 40V, t = 1.0s; Nonrepetitive 2.87 – – A
IC = 500mA, VCE = 10V, f = 1MHz 2.5 – – MHz
T
IC = 1A, VCE = 4V, f = 1kHz 15 – 120
fe
VCE = 4V, IC = 1A, f = 1kHz 10 – – kHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (h
) matched to within
FE
10% of each other.
Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and
NTE130 (NPN).
.350 (8.89)
.215 (5.45)
.430
(10.92)
Emitter
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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