NTE NTE218 Datasheet
NTE218
Silicon PNP Transistor
Audio Power Output
Description:
The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device
features:
Features:
D Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A
D High Gain Characteristics – h
D Excellent Safe Area Limits
Absolute Maximum Ratings:
@ IC = 250mA: 30–100
FE
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Device Dissipation (T
2.A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
= +25°C), PD 25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Derate above 25°C 0.143W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Colector–Emitter Sustaining Voltage V
Emitter Cutoff Current I
Collector Cutoff Current I
: (TC = +25°C unless otherwise sepcified)
CEO(sus)IC
EBO
CEX
I
CEO
I
CBO
= 100mA, IB = 0, Note 1 80 – – V
VEB = 7V – – 0.5 mA
VCE = 80V, V
VCE = 60V, V
VCE = 60V, IB = 0 – – 1.0 mA
VCB = 80V, IE = 0 1 – 100 µA
= 1.5V – – 100 µA
BE(off)
= 1.5V, TC = +150°C – – 1.0 mA
BE(off)
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise sepcified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Voltage V
Transient Characteristics
Current Gain Bandwidth Product f
Common Base Output Capacitance C
Small–Signal Current Gain h
CE(sat)IC
FE
BE
VCE = 1V, IC = 100mA 40 – –
VCE = 1V, IC = 250mA 30 – 100
VCE = 1V, IC = 500mA 20 – –
VCE = 1V, IC = 1A 10 – –
= 1A, IB = 125mA – – 0.6 V
VCE = 1V, IC = 250mA – – 1.0 V
VCE = 1V, IC = 250mA, f = 1MHz 3 – – MHz
T
VCE = 10V, IC = 0, f = 100kHz – – 100 pF
ob
VCE = 10V, IC = 50mA, f = 1kHz 25 – –
fe
Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.031 (0.78) Dia
.960 (24.3) Base
.580 (14.7)
.360
(9.14)
Min
.200
(5.08)
EmitterCollector/Case
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