NTE NTE216 Datasheet

Silicon NPN Transistor

High Speed Switch, Core Driver

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Power Dissipation (T
Maximum Operating Temperature, T

CBO

CEO

EBO

= +25°C), P

A

D

opr

NTE216

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Capacitance C
Turn–Off Time t

(TA = +25°C unless otherwise specified)

CBO

FE

CE(sat)IC
BE(sat)IC

off

VCB = 60V – – 1.7 µA
IC = 10mA, VCE = 1V 30 – –
IC = 150mA, VCE = 1V 60 – 150
IC = 300mA, VCE = 1V 40 – –
IC = 500mA, VCE = 1V 35 – –
IC = 800mA, VCE = 2V 20 – –
IC = 1A, VCE = 5V 25 – –

ob

VCC = 30V, IC = 500mA,
I

= 10mA – – 0.25 V
= 10mA – – 0.76 V

– – 10 pF
– – 60 ns

= IB2 = 50mA

B1

.200 (5.08)

.180 (4.57)

.100 (2.54)

.180

E B C

.018 (0.46) .015 (0.38)

(4.57)

.594

(15.09)

3.050 (1.27)

.050 (1.27) .050 (1.27)

.140

(3.55)

.090 (2.28) R