NTE NTE216 Datasheet
Silicon NPN Transistor
High Speed Switch, Core Driver
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Power Dissipation (T
Maximum Operating Temperature, T
CBO
CEO
EBO
= +25°C), P
A
D
opr
NTE216
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Capacitance C
Turn–Off Time t
(TA = +25°C unless otherwise specified)
CBO
FE
CE(sat)IC
BE(sat)IC
off
VCB = 60V – – 1.7 µA
IC = 10mA, VCE = 1V 30 – –
IC = 150mA, VCE = 1V 60 – 150
IC = 300mA, VCE = 1V 40 – –
IC = 500mA, VCE = 1V 35 – –
IC = 800mA, VCE = 2V 20 – –
IC = 1A, VCE = 5V 25 – –
ob
VCC = 30V, IC = 500mA,
I
= 10mA – – 0.25 V
= 10mA – – 0.76 V
– – 10 pF
– – 60 ns
= IB2 = 50mA
B1
.200 (5.08)
.180 (4.57)
.100 (2.54)
.180
E B C
.018 (0.46) .015 (0.38)
(4.57)
.594
(15.09)
3.050 (1.27)
.050 (1.27) .050 (1.27)
.140
(3.55)
.090 (2.28) R
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