NTE NTE215 Datasheet

NTE215
Silicon NPN Transistor
Darlington Driver
Description:
The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in­clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
D High DC Current Gain D Large Current Capacity and Wide ASO D Low Saturation Voltage
Absolute Maximum Ratings:
Collector to Base Voltage, V Collector to Emitter Voltage, V Emitter to Base Voltage, V Collector Current, I
C
(TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T Collector Dissipation (T Operating Junction Temperature, T Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Current Gain–Bandwidth Product f Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage V Collector–Base Breakdown Voltage V Collector–Emitter Breakdown Voltage V Turn–On Time t Storage Time t Fall Time t
= +25°C), PC 2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
= +25°C), PC 60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
J
stg
(TA = +25°C unless otherwise specified)
CBO EBO
FE
T CE(sat)IC BE(sat)IC
(BR)CBOIC
(BR)CEOIC
on
stg
VCB = 80V, IE = 0 0.1 mA VEB = 5V, IC = 0 3.0 mA VCE = 3V, IC = 4A 1500 4000 – VCE = 5V, IC = 4A 20 MHz
VCC = 50V, VBE = –5V, 500IB1 = –500IB2 = IC = 4A, PW = 50µs, Duty Cycle 1%
PW = 50µs, Duty Cycle 1%
f
110V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4A, IB = 8mA 0.9 1.5 V = 4A, IB = 8mA 2.0 V = 5mA, IE = 0 110 V = 50mA, RBE = 100 V
0.6 µs – 4.8 µs – 1.6 µs
Schematic Diagram
B
C
E
.190 (4.82)
.787
(20.0)
.591
(15.02)
.787
(20.0)
.615 (15.62)
C
.126
(3.22)
Dia
BCE
.215 (5.47)
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