NTE NTE213 Datasheet
NTE213
Germanium PNP Transistor
High Power, High Gain Amplifier
Description:
The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power,
high–gain applications in high–reliability industrial equipment.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Total Device Dissipation (T
CEO
CES
CB
EB
= +25°C), P
C
D
Derate Above 25°C 0.5W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R
J
thJC
–65° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
170W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Elwectrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Floating Potential V
Collector Cutoff Current I
Emitter Cutoff Current I
(TA = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
EBF
CBO
EBO
= 1A, IB = 0, Note 1 60 – – V
= 300mA, VBE = 0, Note 1 75 – – V
VCB = 75V, IE = 0 – – 1.0 V
VCB = 2V, IE = 0 – 0.8 0.2 mA
VCB = 74V, IE = 0 – 0.9 4.0 mA
VCB = 75V, IE = 0, TC = +71°C – 4.0 15 mA
VBE = 25V, IC = 0 – 0.2 4.0 mA
VBE = 30V, IC = 0 – 0.2 4.0 mA
VBE = 40V, IC = 0 – 0.2 4.0 mA
VBE = 40V, IC = 0, TC = +71°C – 2.7 15 mA
Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
FE
VCB = 2V, IC = 5A 50 75 100
VCB = 2V, IC = 15A 25 47 –
VCB = 2V, IC = 25A 15 38 –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 5A, IB = 500mA – 0.06 0.1 V
IC = 25A, IB = 2A – 0.2 0.3 V
Base–Emitter ON Voltage V
BE(on)IC
= 5A, IB = 500mA – 0.65 1.0 V
IC = 25A, IB = 2A – 1.0 2.0 V
Dynamic Characteristics
Common–Emitter Cutoff Frequency fαe VCE = 6V, IC = 5A 2.0 2.7 – kHz
1.250 (31.75
Dia Max
1.005 (25.55)
Dia Max
.500
(12.7)
Max
.710
(18.03)
Max
.520 (13.2)
Max
Emitter
Base
.312 (7.93)
10–32 UNF–2A
.190 (4.83)
.345 (8.76)
Collector/Case
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