NTE NTE213 Datasheet

NTE213

Germanium PNP Transistor

High Power, High Gain Amplifier

Description:

The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power,
high–gain applications in high–reliability industrial equipment.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Total Device Dissipation (T

CEO
CES

CB

EB

= +25°C), P

C

D

Derate Above 25°C 0.5W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R

J
thJC

–65° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

170W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Elwectrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

Floating Potential V
Collector Cutoff Current I

Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CEOIC

V

(BR)CESIC

EBF

CBO

EBO

= 1A, IB = 0, Note 1 60 – – V

= 300mA, VBE = 0, Note 1 75 – – V
VCB = 75V, IE = 0 – – 1.0 V
VCB = 2V, IE = 0 – 0.8 0.2 mA
VCB = 74V, IE = 0 – 0.9 4.0 mA
VCB = 75V, IE = 0, TC = +71°C – 4.0 15 mA
VBE = 25V, IC = 0 – 0.2 4.0 mA
VBE = 30V, IC = 0 – 0.2 4.0 mA
VBE = 40V, IC = 0 – 0.2 4.0 mA
VBE = 40V, IC = 0, TC = +71°C – 2.7 15 mA

Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

FE

VCB = 2V, IC = 5A 50 75 100
VCB = 2V, IC = 15A 25 47 –
VCB = 2V, IC = 25A 15 38 –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 5A, IB = 500mA – 0.06 0.1 V
IC = 25A, IB = 2A – 0.2 0.3 V

Base–Emitter ON Voltage V

BE(on)IC

= 5A, IB = 500mA – 0.65 1.0 V
IC = 25A, IB = 2A – 1.0 2.0 V

Dynamic Characteristics

Common–Emitter Cutoff Frequency fαe VCE = 6V, IC = 5A 2.0 2.7 – kHz

1.250 (31.75
Dia Max

1.005 (25.55)
Dia Max

.500

(12.7)

Max

.710

(18.03)

Max

.520 (13.2)

Max

Emitter

Base

.312 (7.93)

10–32 UNF–2A

.190 (4.83)

.345 (8.76)

Collector/Case