NTE NTE2114 Datasheet

NTE2114

Integrated Circuit

MOS, Static 4K RAM, 300ns

Description:

The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon–
gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for
operation. The data is read out nondestructively and has the same polarity as the input data. Com­mon input/output pins are provided.

The separate chip select input (CS

) allows easy memory expansion by OR–tying individual devices

to a data bus.

Features

D All Inputs and Outputs Directly TTL Compatible
D Static Operation: No Clocks or Refreshing Required
D Low Power: 225mW Typ
D High Speed: Down to 300ns Access Time
D TRI–STATE Output for Bus interface
D Common Data In and Data Out Pins
D Single 5V Supply
D Standard 18–Lead DIP Package

Absolute Maximum Ratings:

Voltage at Any Pin –0.5V to +7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, P
Storage Temperature Range, T
Lead Temperature (During Soldering, 10sec), T

D

stg

L

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Recommended Operating Conditions:

Parameter Symbol Test Conditions Min Max Units

Supply Voltage V
Ambient temperature T

CC

A

4.75 5.25 V
0 +70 °C

DC Electrical Characteristics: (TA = 0° to +70°, VCC = 5V ±5% unless otherwise specified)

Parameter

Logical “1” Input Voltage V
Logical “0” Input Voltage V
Logical “1” Output Voltage V
Logical “0” Output Voltage V
Input Load Current I
Output Leakage Current I
Power Supply Current I
Power Supply Current I

Symbol Test Conditions Min Max Units

IH

IL
OH
OL
LI

LO
CC1
CC2

2.0 V

CC

–0.5 0.8 V
IOH = –1.0mA 2.4 – V
IOL = 2.1mA – 0.4 V
VIN = 0 to 5.25V –10 10 µA
VO = 4V to 0.4V, CS = V

IH

–10 10 µA
All Inputs = 5.25V, TA = 25°C – 95 mA
All Inputs = 5.25V, TA = 0°C – 100 mA

V

AC Electrical Characteristics: (TA = 0°C to +70°C, VCC = 5V ±5%, Note 2 unless otherwise specified)

Parameter

Symbol Test Conditions Min Max Units

READ CYCLE

Read Cycle Time (WE = VIH) t
Access Time t
Chip Select to Output Valid t
Chip Select to Output Active t
Chip Select to Output TRI–STATE t
Output Hold from Address Change t

RC

A
CO
CX

COT
OHA

300 – ns

– 300 ns
– 100 ns

20 – ns

0 80 ns

10 – ns

WRITE CYCLE

Write Cycle Time t
Write Pulse Width t
Write Recovery Time t
Data Set–Up Time t
Data Hold Time t
Write Enable to Output TRI–STATE t
Write Enable to Output Valid t

WC
WP
WR

DS
DH

WOT

WO

Capacitance: (TA = +25°C, f = 1 MHZ, Note 3 unless otherwise specified)

Parameter

Input Capacitance C
Output Capacitance C

Symbol Test Conditions Min Max Units

IN

OUT

All Inputs VIN = 0V – 5 pF
VO = 0V – 10 pF

Note 1: Typical values at TA = +25°C.
Note 2: All input transitions ≤ 10ns.Timing referenced to V

IL(MAX)

or V

IH(MIN)

0.8V and 2V for output. For test purposes, input levels should swing between
0V and 3V. Output load = 1 TTL gate and C

= 100 pF.

L

Note 3: This parameter is guaranteed by periodic testing.

300 – ns
150 – ns

0 – ns

150 – ns

0 – ns
0 80 ns
– 100 ns

for inputs,