NTE NTE2102 Datasheet

NTE2102

Integrated Circuit

NMOS, 1K Static RAM (SRAM), 350ns

Description:

The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead
DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage
cells eliminate the need for clock or refresh circuitry.

Low threshold silicon gate N–Channel technology allows complete DTL/TTL compatibility of all inputs
and outputs as well as a single 5V supply. The separate chip enable input (CE
allows easy memory expansion by OR–tying individual devices to a data bus. Data in and data out
have the same polarity.

Features:

D Single 5V Supply
D All Inputs and Outputs Directly DTL/TTL Compatible
D Static Operation – No Clocks or Refresh
D All Inputs Protected Against Static Charge
D 350ns Access Time

) controlling the output

Absolute Maximum Ratings:

(Note 1)

Voltage at Any Pin 0.5V to +7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, P
Storage Temperature Range, T

D

stg

Lead Temperature (During Soldering, 10sec), T

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. “Abso l u t e Maximu m Ratin gs ” are t h o s e values beyon d which the d e vi c e may b e permanently

damaged. They do not mean the device may be operated at these values.

Recommended Operating Conditions:

Parameter Symbol Test Conditions Min Typ Max Unit

Supply Voltage V
Operating Ambient Temperature T
Input Low Voltage V
Input High Voltage V

CC

A
IL

IH

4.75 – 5.25 V
0 – +70 °C

–0.5 – 0.8 V

2.0 – V

CC

V

DC Electrical Characteristics: (TA = 0° to +70°C, VCC = 5V ±5% unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Load Current I
Output Leakage Current, High I
Output Leakage Current, Low I
Power Supply Current I

Power Supply Amp I

Output Low Voltage V
Output High Voltage V

LI

LOH

LOL

CC

CC

OL
OH

VIN = 0 to 5.25V – – 10 µA
CE = 2V, V
CE = 2V, V
All Inputs = 5.25V, Data Output Open,

T

= +25°C

A

All Inputs = 5.25V, Data Output Open,

= 0°C

T

A

= 2.4V – – 5 µA

OUT

= 0.4V – – –10 µA

OUT

– – 45 mA

– – 50 mA

IOL = 3.2mA – – 0.4 V
IOH = –200µA 2.4 – – V

AC Electrical Characteristics (With Standard Load): (TA = 0° to +70°C, VCC = 5V ±5% unless

otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Read Cycle

Read Cycle t
Access Time t
Chip Enable to Output Time t
Previous Read Data Valid with Respect to Address t
Previous Read Data Valid with Respect to Chip Enable t

Write Cycle

RC

A

CO
OH1
OH2

350 – – ns

– – 350 ns
– – 150 ns

40 – – ns

0 – – ns

Write Cycle t
Address to Write Set–Up t
Write Pulse Width t
Write Recovery Time t
Data Set–Up Time t
Data Hold Time t
Chip Enable to Write Set–Up t

WC
AW
WP
WR
DW

DH

CW

350 – – ns

20 – – ns

150 – – ns

0 – – ns

125 – – ns

0 – – ns

150 – – ns

AC Electrical Characteristis: (TA = +25°C, f = 1MHz unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Capacitance

Input Capacitance C
Output Capacitance C

OUT

All Inputs VIN = 0V – 3 5 pF

IN

VO = 0V – 4 6 pF

Standby Characteristics: (TA = 0° to +70°C, Note 2 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

VCC in Standby V
CE Bias in Standby V

PD

CES

2 ≤ VPD ≤ VCCmax 2.0 – – V

1.5 ≤ VPD ≤ 2 V

1.5 – – V

PD

– – V

Note 2. Typical values at TA = +25°C.