NTE NTE210, NTE211 Datasheet

NTE210 (NPN) & NTE211 (PNP)

Silicon Complementary Transistors

General Purpose Output & Driver

Description:

The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a T O202 type pack­age designed for general purpose, medium voltage, medium power amplifier and driver applications
such as series, shunt and switching regulators, and low and high frequency inverters and converters.

Features:

D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO
CES

EBO

Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C, Note 2), P

A

D

Derate Above 25°C 13.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 50mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Thermal Resistance, Junction–to–Case, R

thJA

thJC

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.67W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6.25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . .

75°C/W. . . . . . . . . . . . . . . . . . . . . . . . .

20°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Test: Pulse Width ≤ 300µs.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CEOIC

CES
EBO

= 10mA, IB = 0 75 – – V
VCE = 90V – – 100 nA
VEB = 5V – – 100 nA

= +25°C.

A

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 3)

DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

Dynamic Characteristics

Current–Gain Bandwidth Product f
Collector–Base Capacitance

NTE210

NTE211 – – 18 pF

FE

CE(sat)IC
BE(sat)IC

C

IC = 100mA, VCE = 2V 120 – 360
IC = 1A, VCE = 2V 10 – –

= 500mA, IB = 50mA – – 1.0 V

= 500mA, IB = 50mA – – 1.5 V

IC = 20mA, VCE = 10V, f = 20MHz 75 – 375 MHz

T
cb

VCB = 20V, IE = 0, f = 1MHz – – 12 pF

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.180 (4.57).380 (9.56)

C

.132 (3.35) Dia

.500

(12.7)

1.200

.325

(9.52)

(30.48)

Ref

.070 (1.78) x 45°

.300

(7.62)

.400

(10.16)

Min

EBC

.100 (2.54) .100 (2.54)

Chamf

.050 (1.27)