NTE NTE2013, NTE2012, NTE2011, NTE2015, NTE2014 Datasheet

NTE2011/NTE2012/NTE2013/NTE2014/NTE2015
Integrated Circuit
7–Channel Darlington Array/Driver
Description:
The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub­strate. All units have open–collector outputs and integral diodes for inductive load transient suppres­sion.
The NTE201 1 is a general purpose array that may be used with standard bi–polar digital logic using external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs opposite inputs to facilitate printed wiring board layouts.
The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and resistor in series to limit the input current to a safe value in that application. The Zener diode also gives this device excellent noise immunity.
The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs – particularly those beyond the capabilities of standard logic buffers.
The NTE2014 has a 10.5k series input resistor that permits operation directly from CMOS or PMOS outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2013, while the required input voltage is less than that required by the NTE2012.
The NTE2015 is designed for use with standard TTL and Schottky TTL, with which higher output cur­rents are required and loading of the logic output is not a concern. This device will sink a minimum of 350mA when driven from a “totem pole” logic output.
Absolute Maximum Ratings: (TA = +25°C for any one Darlington pair unless otherwise specified) Output Voltage, V Input Voltage, V
IN
CE
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2012, NTE2013, NTE2014 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2015 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current. I
C
NTE2011, NTE2013, NTE2014 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2012, NTE2015 600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Input Current, I Power Dissipation, P
D
IN
25mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
One Darlington Pair 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device (Note 1) 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T Storage Temperature Range, T
stg
A
–20° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The NTE2015 is a discontinued device and no longer available. Note 2. Derate at the rate of 16.6mW/°C above +25°C.
Note 3. Under normal operating conditions, these devices will sustain 350mA per output with
V
CE(sat)
= 1.6V at +70°C with a pulse width of 20ms and a duty cycle of 34%.
Electrical Characteristics: (TA = +25° unless otherwise specified)
Parameter Symbol Device Test Conditions Min Typ Max Unit
Output Leakage Current I
Collector–Emitter V
CEX
CE(sat)
Saturation Voltage NTE2013
Input Current I
Input Voltage V
IN(ON)
I
IN(OFF)
IN(ON)
All VCE = 50V, TA = +25°C 50 µA
VCE = 50V, TA = +70°C 100 µA NTE2012 VCE = 50V, TA = +70°C, VIN = 6V 500 µA NTE2014 VCE = 50V, TA = +70°C, VIN = 1V 500 µA NTE201 1
NTE2014
NTE2014
IC = 100mA, IB = 250µA 0.9 1.1 V
IC = 200mA, IB = 350µA 1.1 1.3 V
IC = 350mA, IB = 500µA 1.3 1.6 V NTE2012
NTE2015
IC = 200mA, IB = 350µA 1.1 1.3 V
IC = 350mA, IB = 500µA 1.3 1.6 V
IC = 500mA, IB = 600µA 1.7 1.9 V NTE2012 VIN = 17V 0.82 1.25 mA NTE2013 VIN = 3.85V 0.93 1.35 mA NTE2014 VIN = 5V 0.35 0.50 mA
VIN = 12V 1.0 1.45 mA NTE2015 VIN = 3V 1.5 2.4 mA
All IC = 500µA, TA = +70°C 50 60 µA NTE2012 VCE = 2V, IC = 500mA 17 V NTE2013 VCE = 2V, IC = 200mA 2.4 V
DC Forward Current
h
Transfer Ratio Input Capacitance C Turn–On Delay t Turn–Off Delay t
Clamp Diode Leakage I
Current Clamp Diode Forward Voltage V
FE
IN PLH PHL
R
VCE = 2V, IC = 250mA 2.7 V VCE = 2V, IC = 300mA 3.0 V
NTE2014 VCE = 2V, IC = 125mA 5.0 V
VCE = 2V, IC = 200mA 6.0 V VCE = 2V, IC = 275mA 7.0 V
VCE = 2V, IC = 350mA 8.0 V NTE2015 VCE = 2V, IC = 350mA 2.6 V NTE201 1 VCE = 2V, IC = 350mA 1000
All 15 25 pF All 0.5 Ein to 0.5 E All 0.5 Ein to 0.5 E All
VR = 50V, TA = +25°C 50 µA
out out
0.25 1.0 µs 0.25 1.0 µs
VR = 50V, TA = +70°C 100 µA
F
All IF = 350mA 1.7 2.0 V
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